PA502FMG datasheet(2/5 Pages) ETC2

Part #	PA502FMG

Description	P-Channel Logic Level Enhancement Mode Field Effect Transistor

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P-Channel Logic Level Enhancement

Mode Field Effect Transistor

PA502FMG

SOT-23

Lead-Free

NIKO-SEM

2

Nov-03-2004

Forward Transconductance

1

gfs

VDS = -5V, ID = -2A

16

S

DYNAMIC

Input Capacitance

Ciss

410

Output Capacitance

Coss

220

Reverse Transfer Capacitance

Crss

VGS = 0V, VDS = -6V, f = 1MHz

85

pF

Total Gate Charge

2

Qg

5.8

10

Gate-Source Charge

2

Qgs

0.85

Gate-Drain Charge

2

Qgd

VDS = 0.5V(BR)DSS, VGS = -4.5V,

ID = -2A

1.70

nC

Turn-On Delay Time

2

td(on)

13

Rise Time

2

tr

VDD = -10V

36

Turn-Off Delay Time

2

td(off)

ID

≅ -1A, V

GS = -4.5V, RG = 6Ω

42

Fall Time

2

tf

34

nS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current

IS

-1.6

Pulsed Current

3

ISM

-3

A

Forward Voltage

1

VSD

IF = -1A, VGS = 0V

-1.2

V

1Pulse test : Pulse Width

≤ 300 µsec, Duty Cycle ≤ 2％.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

REMARK: THE PRODUCT MARKED WITH “20YWW”, DATE CODE or LOT #

Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.

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