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L9611C Datasheet(PDF) 6 Page - STMicroelectronics |
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L9611C Datasheet(HTML) 6 Page - STMicroelectronics |
6 / 12 page Figure 2 : The Typical Waveforms for the Power Limitation Function. SHORT CIRCUIT CURRENT REGULATION The maximum load current in the short circuit con- dition can be chosen by the value of the current sensing resistor RS according to : ISC =VSI/RS Two identical VS compatible comparators are pro- vided to realize the short circuit protection. After reaching the lower threshold voltage (typical value VSI-10 mV), the first comparator enables the timer and the gate is driven with the full continuous pump voltage : when the upper threshold voltage value is reached the second comparator maintains the chosen ISC driving the NMOS gate in continuous mode. This function - showed in fig. 3 - speeds up the switch on phase for a lamp as a load. BANDGAP VOLTAGE REFERENCE The circuit provides a reference voltage which may be used as control input voltage through a resistive divider. This reference is protected against the short circuit current. CHARGE PUMP The charge pump circuit holds the N-MOS gate above the supply voltage during the ON phase. This circuit consists of an RC astable which drives a com- parator with a push-pull output stage. The external charge pump capacitor CP must be at least equal to the NMOS parasitic input capacitance. For fast gate voltage variation CP must be increased or the bootstrap function can be used. The bootstrap capacitor should be at least 10 times greater than the powerMOS parasitic capacitance. The charge pump voltage VPUMP can reach to : VPUMP =2 VS -VBE -VCESAT The circuit is disabled if the supply voltage is higher than VSH. L9610C - L9611C 6/12 |
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