eorex
EM48AM1684VTB
Apr. 2007
www.eorex.com
256Mb (4M
×4Bank×16) Synchronous DRAM
Features
• Fully Synchronous to Positive Clock Edge
• Single 3.3V
±0.3V Power Supply
• LVTTL Compatible with Multiplexed Address
• Programmable Burst Length (B/L) - 1, 2, 4, 8
or Full Page
• Programmable CAS Latency (C/L) - 2 or 3
• Data Mask (DQM) for Read / Write Masking
• Programmable Wrap Sequence
– Sequential (B/L = 1/2/4/8/full Page)
– Interleave (B/L = 1/2/4/8)
• Burst Read with Single-bit Write Operation
• All Inputs are Sampled at the Rising Edge of
the System Clock
• Auto Refresh and Self Refresh
• 8,192 Refresh Cycles / 64ms (7.8us)
Description
The EM48AM1684VTB is Synchronous Dynamic
Random Access Memory (SDRAM) organized as
4Meg words x 4 banks by 16 bits. All inputs and
outputs are synchronized with the positive edge of
the clock.
The 256Mb SDRAM uses synchronized pipelined
architecture to achieve high speed data transfer
rates and is designed to operate at 3.3V low power
memory system. It also provides auto refresh with
power saving / down mode. All inputs and outputs
voltage levels are compatible with LVTTL.
Available packages: TSOPII 54P 400mil.
Ordering Information
Part No
Organization
Max. Freq
Package
Grade
Pb
EM48AM1684VTB-75F
16M X 16
133MHz @CL3
54pin TSOP(ll)
Commercial
Free
EM48AM1684VTB-7F
16M X 16
143MHz @CL3
54pin TSOP(ll)
Commercial
Free
EM48AM1684VTB-75FE
16M X 16
133MHz @CL3
54pin TSOP(ll)
Extended
Free
EM48AM1684VTB-7FE
16M X 16
143MHz @CL3
54pin TSOP(ll)
Extended
Free
* EOREX reserves the right to change products or specification without notice.
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