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L9352-DIE1 Datasheet(PDF) 4 Page - STMicroelectronics |
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L9352-DIE1 Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 21 page L9352 4/21 ABSOLUTE MAXIMUM RATINGS The absolute maximum ratings are the limiting values for this device. Damage may occur if this device is sub- jected to conditions which are beyond these values. THERMAL DATA Symbol Parameter Test Conditions Min Typ Max Unit EQ Switch off energy for inductive loads 50 mJ Voltages VS Supply voltage -0.3 40 V VCC, VDD Supply voltage -0.3 6 V VQ Output voltage static 40 V VQ Output voltage during clamping t < 1ms 60 V VIN, VEN Input voltage IN1 to IN4, EN II < |10|mA -1.5 6 V VCLK Input Voltage CLK -1.5 6 V VST Output voltage status -0.3 6 V VD Recirculation circuits D3, D4 40 V VDRmax max. reverse breakdown voltage of free wheeling diodes D3, D4 55 V Currents IQ1/2 Output current for Q1 and Q2 >5 internal limited A IQ3/4 Output current for Q3 and Q4 >3 internal limited A IQ1/2, IPGND1/2 Output current at reversal supply for Q1 and Q2 -4 A IQ3/4, IPGND3/4 Output current at reversal supply for Q3 and Q4 -2 A IST Output current status pin -5 5 mA ESD Protection ESD Electrostatical Discharging GND, PGND, Qx, Dx, CLK, ST, IN, TEST, EN MIL883C ±2kV VS, VCC,VDD Supply pins vs. GND and PGND ±1 kV ESD Output Pins (Qx, Dx) vs. Common GND (PGND1-4 + GND) ±4kV Symbol Parameter Test Conditions Min Typ Max Unit Tj Junction temperature Tj -40 150 °C Tjc Junction temperature during clamping (life time) Σt = 30min Σt = 15min 175 190 °C Tstg Storage temperature Tstg -55 150 °C Tth Overtemperature shutdown threshold (1) (1) This parameter will not be tested but assured by design 175 200 °C Thy Overtemperature shutdown hysteresis (1) 10 °C RthJC Thermal resistance junction to case RthJC 2 K/W |
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