MMST4401 datasheet(2/3 Pages) BILIN

Part #	MMST4401

Description	NPN Silicon Epitaxial Planar Transistor

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Manufacturer	BILIN [Galaxy Semi-Conductor Holdings Limited]

Direct Link	http://www.galaxycn.com

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2 / 3 page

BL Galaxy Electrical

Production specification

NPN Silicon Epitaxial Planar Transistor

MMST4401

Document number: BL/SSSTF053

www.galaxycn.com

Rev.A

2

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=100μA,IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

40

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100μA,IC=0

6

V

Collector cut-off current

ICBO

VCB=35V,IE=0

0.1

μA

Collector cut-off current

ICEO

VCE=35V,IB=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

μA

DC current gain

hFE

VCE=1V,IC=150mA

VCE=1V,IC=500mA

100

40

300

Collector-emitter saturation voltage

VCE(sat)

IC=150mA,IB=15mA

0.4

V

Base-emitter saturation voltage

VBE(sat)

IC=150mA,IB=15mA

0.95

V

Transition frequency

fT

VCE=10V, IE=20mA

f=100MHz

250

MHz

Collector output capacitance

Cob

VCB=10V, IE=0,f=1MHz

6.5

pF

Delay time

td

15

nS

Rise time

tr

VCC=30V,VBE=2V,

IC=150mA,IB=15mA

20

nS

Storage time

ts

225

nS

Fall time

tf

VCC=30V,IC=150mA,

IB1=IB2=15mA

30

nS

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