BC846W datasheet(2/3 Pages) BILIN

Part #	BC846W

Description	NPN Silicon Epitaxial Planar Transistor

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Manufacturer	BILIN [Galaxy Semi-Conductor Holdings Limited]

Direct Link	http://www.galaxycn.com

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BL Galaxy Electrical

Production specification

NPN Silicon Epitaxial Planar Transistor

BC846W/BC847W/BC848W

Document number: BL/SSSTF045

www.galaxycn.com

Rev.A

2

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown

voltage

V(BR)CBO

IC=100μA,IE=0

BC846W

BC847W

BC848W

80

50

30

V

Collector-emitter breakdown

voltage

V(BR)CEO

IC=1mA,IB=0

BC846W

BC847W

BC848W

65

45

30

V

Emitter-base breakdown

voltage

V(BR)EBO

IE=100μA,IC=0

BC846W

BC847W

BC848W

6

5

V

Collector cut-off current

ICBO

VCB=30V,IE=0

15

nA

Emitter cut-off current

IEBO

VEB=5V,IC=0

100

nA

VCE=5V,IC=10μA

BC846AW,BC847AW

BC846BW,BC847BW,BC848BW

BC847CW,BC848CW

90

150

270

DC current gain

hFE

VCE=2V,IC=100mA

BC846AW,BC847AW

BC846BW,BC847BW,BC848BW

BC847CW,BC848CW

110

200

420

180

290

520

220

450

800

Collector-emitter saturation

voltage

VCE(sat)

IC=10mA, IB= 0.5mA

90

250

mV

Base-emitter saturation

voltage

VBE(sat)

IC=10mA, IB= 0.5mA

700

V

Transition frequency

fT

VCE=5V,IC=10mA,f=100MHz

100

MHz

Collector capacitance

CC

VCB=10V,IE=0,f=1MHz

3

pF

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