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BC846W Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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BC846W Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 3 page BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor BC846W/BC847W/BC848W Document number: BL/SSSTF045 www.galaxycn.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 BC846W BC847W BC848W 80 50 30 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 BC846W BC847W BC848W 65 45 30 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 BC846W BC847W BC848W 6 6 5 V Collector cut-off current ICBO VCB=30V,IE=0 15 nA Emitter cut-off current IEBO VEB=5V,IC=0 100 nA VCE=5V,IC=10μA BC846AW,BC847AW BC846BW,BC847BW,BC848BW BC847CW,BC848CW 90 150 270 DC current gain hFE VCE=2V,IC=100mA BC846AW,BC847AW BC846BW,BC847BW,BC848BW BC847CW,BC848CW 110 200 420 180 290 520 220 450 800 Collector-emitter saturation voltage VCE(sat) IC=10mA, IB= 0.5mA 90 250 mV Base-emitter saturation voltage VBE(sat) IC=10mA, IB= 0.5mA 700 V Transition frequency fT VCE=5V,IC=10mA,f=100MHz 100 MHz Collector capacitance CC VCB=10V,IE=0,f=1MHz 3 pF |
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