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EL5175IS-T13 Datasheet(PDF) 3 Page - Intersil Corporation |
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EL5175IS-T13 Datasheet(HTML) 3 Page - Intersil Corporation |
3 / 16 page 3 FN7306.6 IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA Absolute Maximum Ratings (TA = +25°C) Thermal Information Supply Voltage (VS+ to VS-) . . . . . . . . . . . . . . . . . . . . . . . . . . . .12V Maximum Output Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . ±60mA Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +135°C Ambient Operating Temperature . . . . . . . . . . . . . . . . -40°C to +85°C Storage Temperature Range . . . . . . . . . . . . . . . . . . -65°C to +150°C Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below http://www.intersil.com/pbfree/Pb-FreeReflow.asp CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications VS+ = +5V, VS- = -5V, TA = +25°C, VIN = 0V, RL = 500Ω, RF = 0, RG = OPEN, CL = 2.7pF, Unless Otherwise Specified. PARAMETER DESCRIPTION CONDITIONS MIN TYP MAX UNIT AC PERFORMANCE BW -3dB Bandwidth AV =1, CL = 2.7pF 550 MHz AV =2, RF = 806, CL = 2.7pF 190 MHz AV =10, RF = 806, CL = 2.7pF 20 MHz BW ± 0.1dB Bandwidth AV =1, CL = 2.7pF 60 MHz SR Slew Rate VOUT = 3VP-P, 20% to 80%, RL = 100Ω 600 V/µs VOUT = 3VP-P, 20% to 80%, RL = 500Ω 900 V/µs tSTL Settling Time to 0.1% VOUT = 2VP-P 10 ns tOVR Output Overdrive Recovery time 20 ns GBWP Gain Bandwidth Product 200 MHz VREFBW (-3dB) VREF -3dB Bandwidth AV =1, CL = 2.7pF 450 MHz VREFSR VREF Slew Rate VOUT = 2VP-P, 20% to 80% 1000 V/µs VN Input Voltage Noise at f = 10kHz 21 nV/ √Hz IN Input Current Noise at f = 10kHz 2.7 pA/ √Hz HD2 Second Harmonic Distortion VOUT = 1VP-P, 5MHz -70 dBc HD2 Second Harmonic Distortion VOUT = 1VP-P, 5MHz -66 dBc HD3 Third Harmonic Distortion VOUT = 1VP-P, 5MHz -94 dBc HD3 Third Harmonic Distortion VOUT = 1VP-P, 5MHz -84 dBc dG Differential Gain at 3.58MHz RL = 150Ω , AV =2 0.1 % d θ Differential Phase at 3.58MHz RL = 150Ω , AV =2 0.1 ° eS Channel Separation (EL5375) at f = 100kHz 90 dB INPUT CHARACTERISTICS VOS Input Referred Offset Voltage EL5175 -3 ±40 mV EL5375 -3 ±30 mV IIN Input Bias Current (VIN, VINB, VREF) -25 -12.5 -6 µA RIN Differential Input Resistance 150 k Ω CIN Differential Input Capacitance 1pF DMIR Differential Mode Input Range ±2.1 ±2.3 ±2.5 V CMIR Common Mode Input Range at VIN+, VIN- -4.3 +3.3 V VREFIN Reference Input Voltage Range VIN+ = VIN- = 0V -3.6 3.3 V EL5175, EL5375 |
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