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DS90C031BTM Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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DS90C031BTM Datasheet(HTML) 3 Page - National Semiconductor (TI) |
3 / 11 page Switching Characteristics (Continued) V CC = +5.0V, TA = +25˚C (Notes 3, 6, 9) Symbol Parameter Conditions Min Typ Max Units t TLH Rise Time 0.35 1.5 ns t THL Fall Time 0.35 1.5 ns t PHZ Disable Time High to Z R L = 100Ω,CL =5pF ( Figure 4 and Figure 5) 2.5 10 ns t PLZ Disable Time Low to Z 2.5 10 ns t PZH Enable Time Z to High 2.5 10 ns t PZL Enable Time Z to Low 2.5 10 ns Switching Characteristics V CC = +5.0V ± 10%, TA = −40˚C to +85˚C (Notes 3, 6, 9) Symbol Parameter Conditions Min Typ Max Units t PHLD Differential Propagation Delay High to Low R L = 100Ω,CL =5pF ( Figure 2 and Figure 3) 0.5 2.0 3.5 ns t PLHD Differential Propagation Delay Low to High 0.5 2.1 3.5 ns t SKD Differential Skew |t PHLD –tPLHD| 0 80 900 ps t SK1 Channel-to-Channel Skew (Note 4) 0 0.3 1.0 ns t SK2 Chip to Chip Skew (Note 5) 3.0 ns t TLH Rise Time 0.35 2.0 ns t THL Fall Time 0.35 2.0 ns t PHZ Disable Time High to Z R L = 100Ω,CL =5pF ( Figure 4 and Figure 5) 2.5 15 ns t PLZ Disable Time Low to Z 2.5 15 ns t PZH Enable Time Z to High 2.5 15 ns t PZL Enable Time Z to Low 2.5 15 ns Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation. Note 2: Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except: VOD1 and ∆VOD1. Note 3: All typicals are given for: VCC = +5.0V, TA = +25˚C. Note 4: Channel-to-Channel Skew is defined as the difference between the propagation delay of the channel and the other channels in the same chip with an event on the inputs. Note 5: Chip to Chip Skew is defined as the difference between the minimum and maximum specified differential propagation delays. Note 6: Generator waveform for all tests unless otherwise specified:f=1 MHz, ZO =50Ω,tr ≤ 6 ns, and tf ≤ 6 ns. Note 7: ESD Ratings: HBM (1.5 k Ω, 100 pF) ≥ 2kV EIAJ (0 Ω, 200 pF) ≥ 250V Note 8: Output short circuit current (IOS) is specified as magnitude only, minus sign indicates direction only. Note 9: CL includes probe and jig capacitance. Parameter Measurement Information 10098903 FIGURE 1. Driver V OD and VOS Test Circuit www.national.com 3 |
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