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DS15MB200_0605 Datasheet(PDF) 5 Page - National Semiconductor (TI) |
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DS15MB200_0605 Datasheet(HTML) 5 Page - National Semiconductor (TI) |
5 / 10 page Absolute Maximum Ratings (Note 6) Supply Voltage (V DD) −0.3V to +4.0V CMOS Input Voltage -0.3V to (V DD+0.3V) LVDS Receiver Input Voltage (Note 7) -0.3V to (V DD+0.3V) LVDS Driver Output Voltage -0.3V to (V DD+0.3V) LVDS Output Short Circuit Current +40 mA Junction Temperature +150˚C Storage Temperature −65˚C to +150˚C Lead Temperature (Solder, 4sec) 260˚C Max Pkg Power Capacity @ 25˚C 5.2W Thermal Resistance ( θ JA) 24˚C/W Package Derating above +25˚C 41.7mW/˚C ESD Last Passing Voltage HBM, 1.5k Ω, 100pF 8kV LVDS pins to GND only 15kV EIAJ, 0 Ω, 200pF 250V CDM 1000V Recommended Operating Conditions Supply Voltage (V CC) 3.0V to 3.6V Input Voltage (V I) (Note 7) 0V to V CC Output Voltage (V O) 0VtoV CC Operating Temperature (T A) Industrial −40˚C to +85˚C Note 6: Absolute maximum ratings are those values beyond which damage to the device may occur. The databook specifications should be met, without exception, to ensure that the system design is reliable over its power supply, temperature, and output/input loading variables. National does not recom- mend operation of products outside of recommended operation conditions. Note 7: VID max < 2.4V Electrical Characteristics Over recommended operating supply and temperature ranges unless other specified. Symbol Parameter Conditions Min Typ (Note 8) Max Units LVTTL DC SPECIFICATIONS (MUX_Sn, PREA_n, PREB_n, PREL_n, ENA_n, ENB_n, ENL_n) V IH High Level Input Voltage 2.0 V DD V V IL Low Level Input Voltage GND 0.8 V I IH High Level Input Current V IN =VDD =VDDMAX −10 +10 µA I IHR High Level Input Current PREA_n, PREB_n, PREL_n 40 200 µA I IL Low Level Input Current V IN =VSS,VDD =VDDMAX −10 +10 µA C IN1 Input Capacitance Any Digital Input Pin to V SS 2.0 pF C OUT1 Output Capacitance Any Digital Output Pin to V SS 4.0 pF V CL Input Clamp Voltage I CL = −18 mA −1.5 −0.8 V LVDS INPUT DC SPECIFICATIONS (SIA±, SIB±,LI±) V TH Differential Input High Threshold (Note 9) V CM = 0.8V or 1.2V or 3.55V, V DD = 3.6V 0 100 mV V TL Differential Input Low Threshold (Note 9) V CM = 0.8V or 1.2V or 3.55V, V DD = 3.6V −100 0 mV V ID Differential Input Voltage V CM = 0.8V to 3.55V, VDD = 3.6V 100 2400 mV V CMR Common Mode Voltage Range V ID = 150 mV, VDD = 3.6V 0.05 3.55 V C IN2 Input Capacitance IN+ or IN− to V SS 2.0 pF I IN Input Current V IN = 3.6V, VDD =VDDMAX or 0V −15 +15 µA V IN = 0V, VDD =VDDMAX or 0V −15 +15 µA LVDS OUTPUT DC SPECIFICATIONS (SOA_n±, SOB_n±, LO_n±) V OD Differential Output Voltage, 0% Pre-emphasis (Note 9) R L is the internal 100 Ω between OUT+ and OUT− 250 360 500 mV ∆V OD Change in V OD between Complementary States -35 35 mV V OS Offset Voltage (Note 10) 1.05 1.22 1.475 V ∆V OS Change in V OS between Complementary States -35 35 mV I OS Output Short Circuit Current OUT+ or OUT− Short to GND −21 -40 mA C OUT2 Output Capacitance OUT+ or OUT− to GND when TRI-STATE 4.0 pF www.national.com 5 |
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