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L6370L Datasheet(PDF) 6 Page - STMicroelectronics

Part # L6370L
Description  2.5A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L6370L Datasheet(HTML) 6 Page - STMicroelectronics

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INPUT SECTION
The input section is an high impedance differen-
tial stage with high common and differential mode
range. There’s built-in offset of +1.4V (typical
value) and an hysteresis of 400mV (maximum
value), to ensure high noise immunity.
DIAGNOSTIC LOGIC
The operating conditions of the device are perma-
nently monitored and the following occurences
are signalled via the DIAG1/DIAG2 open-drain
output pins:
-Short Circuit versus ground.
A current limiting circuit fixes at Isc = 3.2A
(typical value) the maximum current that can
be sourced from the OUTPUT pin (for more
details see short circuit operation section).
- Short Circuit versus Vs.
- Under Voltage(UV)
- Over Temperature (OVT)
- Open Load, if the output current is less than
3mA (typical value).
- Output DMOS Open
according to the diagnostic Truth Table:
SHORT CIRCUIT OPERATION
in order to minimise the power dissipation when
the output is shorted to grounded, an innovative,
non dissipative short cicuit protection (patent
pending) is implemented, avoiding, thus the inter-
vention of the thermal protection in most cases.
Whenever the output is shorted to ground, or,
generally speaking, an over current is sinked by
the load, the output devices is driven in linear
mode, sourcing the Isc current (typically 3.2A) for
a time interval (ton) defined by means of the exter-
nal CON capacitor connected between the ON-
DELAY pin and GND. Whether the short circuit
crease within the ton interval the DIAG2 output
status is not affected, acting as a Programmable
Diagnostic Delay.
This function allow the device to drive a capaci-
tive load or a filament lamp (that exhibits a very
low resistance during the initial heading phase)
without the intervention of the diagnostic.
If the short circuit lasts for the whole tON interval,
the output DMOS is switched OFF and the DIAG2
goes low, for a time interval tOFF lasting 64 times
tON.
At the end of the tOFF interval if the short circuit
condition is still present, the output DMOS is
turned ON (and the DIAG2 goes high - see fig4)
for another tON interval and the sequence starts
again, or, whether not, the normal condition op-
eration is resumed.
The tON interval can be set to lasts between 64
µs
and 2.56ms for a CON capacitor value ranging be-
tween 50pF and 2nF to have:
tON (
µs) = 1.28 CON (pF)
If the ON-DELAY pin is grounded the non dissipa-
tive short circuit protection is disabled, and the Isc
current is delivered until the Overtemperature
Protection shuts the device off. The behaviour of
the DIAG2 output is, in this situation, showed in
the Diagnostic Truth Table.
OVERTEMPERATURE PROTECTION (OVT)
If the chip temperature exceeds
Θlim (measured in
a central position in the chip) the chip deactivates
itself.
The following actions are taken:
all the output stage is switched off;
the signal DIAG2 is activated (active low).
Normal operation is resumed as soon as (typically
after some seconds) the chip temperature moni-
tored goes back below
ΘlimH.
The different thresholds with hysteretic behavior
assure that no intermittent conditions can be gen-
erated.
UNDERVOLTAGE PROTECTION (UV)
The supply voltage is expected to range from
9.5V to 35V, even if its reference value is consid-
ered to be 24V.
In this range the device operates correctly.
Below 9.5V the overall system has to be consid-
ered not reliable.
Protection will thus shut off the output whenever
the supply voltage falls below the mask fixed by
the Vsth1(9V typ.) and Vsth2 (8.5V typ.).
The hysteresis (see fig. 2) ensures a non intermit-
tent behavior at low supply voltage with a super-
imposed ripple.
The Under Voltage status is signalled via the
DIAG1 and DIAG2 outputs (see the Diagnostic
Truth Table) .
DEMAGNETIZATION OF INDUCTIVE LOADS
An internal zener diode, limiting the voltage
across the Power MOS to between 50 and 60V
(Vcl), provides safe and fast demagnetization of
inductive loads without external clamping devices.
The maximum energy that can be absorbed from
an inductive load is specified as 1J (at Tj = 85
°C)
(see figure 2)
L6370
6/10


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