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L6327 Datasheet(PDF) 1 Page - STMicroelectronics |
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L6327 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 4 page 1/4 L6327 L6332 February 2001 This is preliminary information on a new product now in development. Details are subject to change without notice. s Power Supplies +5Vdc, -5Vdc s Current bias or voltage bias (selectable) / Differential Voltage Sense architecture s 6 or 4 channel versions s 38-pin TSSOP package (for either 6 or 4 channels) s Internal reference Resistor for read and write currents s Read channel -3dB bandwidth > 400MHz (Rmr=50 ohm no interconnect) s Input equivalent preamplifier voltage noise 0.5nV/rtHz nominal s Input equivalent MR bias current noise 10 pA/ rtHz nominal s MR bias current programmable (5 bit DAC) 1.5- 7.0mA nominal MR bias voltage programmable (5 bit DAC) 65-335mV nominal s Programmable gain (100V/V, 150, 200 and 250V/V) and read bandwidth s Write frequency up to 300 MHz (Lh=70nH, Rh=20 ohms, Ch=2pF, VEE=-5V) s Rise/Fall time 0.6ns ( Iw =40mA 0-pk, Lh=70nH, Rh=20 ohms, Ch=2pF, VEE=-5V) s Write current programmable (5 bit DAC) 15-60mA s PECL write data input s Bi-directional 16-bit TTL Serial interface for head selection, read/write currents selection, chip parameters modification, chip enable, vendor code and fault status read back registers s 2-pin mode selection (R/W, MRR) s Bank write feature for servo write s Digital buffered head voltage DBHV / Analog buffered head voltage ABHV pin (gain 5) s Thermal asperity detection & correction with adjustable sensitivity level (6 bit DAC) s Automatic successive approximation digital measurement of temperature and Rmr (7 bits) s Read and write head open/short detection, low low supply detect and temperature monitoring (high temperature warning and Analog Temperature Diode Voltage measurement) s Low write frequency detection. s WRITE to READ fast recovery 150ns (same head, including 100ns blanking period) s Head-to-head switch in READ mode - 10 µs (nom) s Head and MR bias current switching transient current head protection s READ-to-WRITE switching 50ns (same head) s Programmable read bias during write and bank write operation s ESD diode for GMR head protection DESCRIPTION L6327/L6332 is a BICMOS monolithic integrated cir- cuit GMR differential preamplifier designed for use with four-terminal magneto-resistive GMR read/in- ductive write heads. It is available as either a six (L6327) or four (L6332) channel device. The devices consist of a voltage-sense, current-bias or voltage- bias (selectable), differential input and differential output, low-noise, high bandwidth read amplifier and include fast current switching write drivers which sup- port data rates in excess of 550 Mb/s with 70nH write heads. The GMR preamplifier provides programmable read current / voltage bias and write current (5 bit DAC for the read bias, 5 bit DAC for the write current), fault detection circuitry and servo writing features. Read amplifier gain, write current wave shape (overshoot, undershoot and damping) can be adjusted and a thermal asperity detection and correction circuit can be enabled and programmed with different thresh- olds (6 bit DAC) through a 16-bit bi-directional serial interface (SDEN, SDATA, SCLK). The device oper- ates from a +5V supply and a -5V supply (nominal). No external components are required as a trimmed or untrimmed resistor for reference current setting is employed. TSSOP38 ORDERING NUMBERS: L6327 L6332 PRODUCT PREVIEW 6 / 4 CHANNEL VOLTAGE SENSE GMR PREAMPLIFIER |
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