Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Supply Voltage (V

−0.3V to +4V

CMOS/TTL Input Voltage

−0.3V to (V

LVDS Driver Output Voltage

−0.3V to (V

LVDS Output Short Circuit

Duration

Continuous

Junction Temperature

+150˚C

Storage Temperature

−65˚C to +150˚C

Lead Temperature

(Soldering, 4 sec)

+260˚C

MTD56 (TSSOP) Package:

DS90C383B

1.63 W

Package Derating:

DS90C383B

12.5 mW/˚C above +25˚C

ESD Rating

(HBM, 1.5 k

Ω, 100 pF)

7 kV

(EIAJ, 0

Ω, 200 pF)

500V

Recommended Operating

Conditions

Min

Nom

Max

Units

Supply Voltage

(V

3.0

3.3

3.6

V

Operating Free Air

Temperature (T

−10

+25

+70

˚C

Supply Noise

Voltage (V

200

mV

PP

TxCLKIN frequency

18

68

MHz

Electrical Characteristics

Over recommended operating supply and temperature ranges unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Units

CMOS/TTL DC SPECIFICATIONS

V

IH

High Level Input Voltage

2.0

V

CC

V

V

IL

Low Level Input Voltage

GND

0.8

V

V

CL

Input Clamp Voltage

I

−0.79

−1.5

V

I

IN

Input Current

V

+1.8

+10

µA

V

−10

0

µA

LVDS DC SPECIFICATIONS

V

OD

Differential Output Voltage

R

Ω

250

345

450

mV

∆V

OD

Change in V

complimentary output states

35

mV

V

OS

Offset Voltage (Note 4)

1.13

1.25

1.38

V

∆V

OS

Change in V

complimentary output states

35

mV

I

OS

Output Short Circuit Current

V

Ω

−3.5

−5

mA

I

OZ

Power Down = 0V,

V

µA

TRANSMITTER SUPPLY CURRENT

ICCTW

Transmitter Supply Current

Worst Case

R

Ω,

C

Worst Case Pattern

(Figures 1, 4 )" Typ "

values are given for V

CC

= 3.6V and T

+25˚C, " Max " values

are given for V

3.6V and T

f = 25MHz

31

45

mA

f = 40MHz

37

50

mA

f = 65 MHz

48

60

mA

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