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ADA4853-1/ADA4853-2/ADA4853-3 Rev. C | Page 5 of 16 ABSOLUTE MAXIMUM RATINGS Table 3. Parameter Rating Supply Voltage 5.5 V Power Dissipation See Figure 6 The power dissipated in the package (PD) for a sine wave and a resistor load is the total power consumed from the supply minus the load power. PD = Total Power Consumed − Load Power Common-Mode Input Voltage −VS − 0.2 V to +VS − 1.2 V Differential Input Voltage ±VS Storage Temperature Range −65°C to +125°C Operating Temperature Range 6-Lead SC70 −40°C to +85°C 16-Lead LFCSP_VQ −40°C to +105°C 14-Lead TSSOP −40°C to +105°C Lead Temperature JEDEC J-STD-20 Junction Temperature 150°C ( ) L OUT CURRENT SUPPLY VOLTAGE SUPPLY D R V I V P 2 – × = RMS output voltages should be considered. Airflow increases heat dissipation, effectively reducing θJA. In addition, more metal directly in contact with the package leads and through holes under the device reduces θJA. Figure 6 shows the maximum safe power dissipation in the package vs. the ambient temperature for the 6-lead SC70 (430°C/W), the 14-lead TSSOP (120°C/W), and the 16-lead LFCSP_VQ (63°C/W) on a JEDEC standard 4-layer board. θJA values are approximations. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 3.0 0 125 105 85 65 45 25 5 –15 –35 –55 AMBIENT TEMPERATURE (°C) 2.5 2.0 1.5 1.0 0.5 SC70 TSSOP LFCSP THERMAL RESISTANCE θJA is specified for the worst-case conditions, that is, θJA is specified for the device soldered in the circuit board for surface-mount packages. Table 4. Package Type θJA Unit 6-Lead SC70 430 °C/W 16-Lead LFCSP_VQ 63 °C/W 14-Lead TSSOP 120 °C/W Figure 6. Maximum Power Dissipation vs. Temperature for a 4-Layer Board ESD CAUTION Maximum Power Dissipation The maximum safe power dissipation for the ADA4853-1/ ADA4853-2/ADA4853-3 is limited by the associated rise in junction temperature (TJ) on the die. At approximately 150°C, which is the glass transition temperature, the plastic changes its properties. Even temporarily exceeding this temperature limit can change the stresses that the package exerts on the die, permanently shifting the parametric performance of the amplifiers. Exceeding a junction temperature of 150°C for an extended period can result in changes in silicon devices, potentially causing degradation or loss of functionality. |
