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OP484FPZ Datasheet(PDF) 3 Page - Analog Devices |
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OP484FPZ Datasheet(HTML) 3 Page - Analog Devices |
3 / 24 page OP184/OP284/OP484 Rev. D | Page 3 of 24 SPECIFICATIONS ELECTRICAL CHARACTERISTICS @ VS = 5.0 V, VCM = 2.5 V, TA = 25°C, unless otherwise noted. Table 1. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage, OP184/OP284E Grade1 VOS 65 μV −40°C ≤ TA ≤ +125°C 165 μV Offset Voltage, OP184/OP284F Grade1 VOS 125 μV −40°C ≤ TA ≤ +125°C 350 μV Offset Voltage, OP484E Grade1 VOS 75 μV –40°C ≤ TA ≤ +125°C 175 μV Offset Voltage, OP484F Grade1 VOS 150 μV –40°C ≤ TA ≤ +125°C 450 μV Input Bias Current IB 60 450 nA –40°C ≤ TA ≤ +125°C 600 nA Input Offset Current IOS 2 50 nA –40°C ≤ TA ≤ +125°C 50 nA Input Voltage Range 0 5 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 5 V 60 dB VCM = 1.0 V to 4.0 V, −40°C ≤ TA ≤ +125°C 86 dB Large Signal Voltage Gain AVO RL = 2 kΩ, 1 V ≤ VO ≤ 4 V 50 240 V/mV RL = 2 kΩ, −40°C ≤ TA ≤ +125°C 25 V/mV Bias Current Drift ΔIB/ΔT 150 pA/°C OUTPUT CHARACTERISTICS Output Voltage High VOH IL = 1.0 mA 4.85 V Output Voltage Low VOL IL = 1.0 mA 125 mV Output Current IOUT ±6.5 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.0 V to 10 V, −40°C ≤ TA ≤ +125°C 76 dB Supply Current/Amplifier ISY VO = 2.5 V, −40°C ≤ TA ≤ +125°C 1.45 mA Supply Voltage Range VS 3 36 V DYNAMIC PERFORMANCE Slew Rate SR RL = 2 kΩ 1.65 2.4 V/μs Settling Time tS To 0.01%, 1.0 V step 2.5 μs Gain Bandwidth Product GBP 3.25 MHz Phase Margin Øo 45 Degrees NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 0.3 μV p-p Voltage Noise Density en f = 1 kHz 3.9 nV/√Hz Current Noise Density in 0.4 pA/√Hz 1 Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power. |
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