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LL4148 Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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LL4148 Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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1 / 2 page  3.4 +0.3 -0.1 0.4±0.1 Cathode indification FEATURES MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified MAXIMUM RATINGS UNITS Reverse voltage V R V Peak reverse voltage V RM V Average forw ard rectified current Half w ave rectification w ith resistive load at t amb=25 oC and f 50Hz Forw ard surge current at t 1S and T J=25 oCI FSM mA Pow er dissipaton at t amb=25 oCP tot mW Junction temperature T J oC Storage temperature range T STG oC UNITS Forw ard voltage @ I F=10mA VF V Leakage current at V R=20V I R n A at V R=75V I R A 111111111at V R=20V T J=150 oC I R A Capacitance at V F=VR=0V C tot pF Voltage rise w hen sw itching on tested w ith 50mA pulses tp=0,1 S,rise time 30ns, fp=5 to 100KHz Reverse recovery time from I F=10mA V R=6V,RL=100 ,at I R=1mA Thermal resistance junction to ambient R JA K/W Rectification effciency at 100MHz,V RF=2V V - ns 1)Valid prov ided that electrodes are kept at ambient temperature 350.0 1) 0.45 - - - -2.5 - - 4.0 - 25.0 5.0 - - 4.0 - - 50.0 - 150.0 - - mA ELECTRICAL CHARACTERISTICS 1) Valid prov ided that electrodes are kept at ambient temperature. MIN TYP MAX I Polarity:Color band denotes cathode V fr t rr - - 175.0 500.00 500.0 1) LL4148 LL4148 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A Case:MINI-MELF glass case SMALL SIGNAL SWITCHING DIODE Silicon epitaxial diode MINI-MELF 500mW power dissipation High speed switching diode GALAXY ELECTRICAL V Weight: Approx 0.031 grams 35-55--- +175 1.0 75.0 100.0 www.galaxycn.com BL Document Number 0268010 1. BLGALAXY ELECTRICAL O |
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