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MBRB2545CT Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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MBRB2545CT Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 2 page 3 12 K-HEATSINK PIN1 0.421(10.69) 0.380(9.65) 0.045(1.14) 0.055(1.40) 0.325(8.25) 0.364(9.25) 0.35(8.89)ref. 0.180(4.58) 0.220(5.58) 0.020(0.51) 0.045(1.14) 0.045(1.14) 0.055(1.40) 0.172(4.37) 0.190(4.83) 0.575(14.60) 0.625(15.88) 0.080(2.03) 0.115(2.92) 0.012(0.30) 0.025(0.64) 0.110(2.79) 0.090(2.29) PIN2 www.galaxycn.com BL Document Number 0267 026 BLGALAXYELECTRICAL 1. FEATURES MECHANICAL DATA Position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unless otherwise specified. UNITS Maximum recurrent peak reverse voltage VRRM V Maximum RMS Voltage VRMS V Maximum DC blocking voltage VDC V Maximum average forw ard total device m rectified current @T C = 130°C IF(AV) A Peak forw ard surge current 8.3ms single half b sine-w ave superimposed on rated load IFSM A Maximum forw ard (IF=30A,TC=25 ) voltage (Note 1) (IF=30A,TC=125 ) Maximum reverse current @T C=25 at rated DC blocking voltage @T C=125 Maximum thermal resistance (Note2) R θJC /W Operating junction temperature range TJ Storage temperature range TSTG 2. Thermal resistance from junction to case. GALAXY ELECTRICAL m A 45 25 150 32 45 VOLTAGE RANGE: 45 V CURRENT: 25 A Metal silicon junction, m ajority carrier conduction. Case:JEDEC D2PAK,m olded plastic body SCHOTTKY BARRIER RECTIFIER High current capacity, low forward voltage drop. NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle. - 55 ---- + 150 - 55 ---- + 150 Term inals:Leads, solderable per MIL-STD-750, 1 1 Method 2026 IR VF 0.2 1.5 D 2PAK MBRB2545CT MBRB2545CT Guard ring for over voltage protection. High surge capacity. For use in low voltage, high frequency inverters, free 111wheeling, and polarity protection applications. Polarity: As m arked Weight: 0.087 ounces,2.2 grams 40 V 0.82 Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%. inch(mm) 0.73 |
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