Data Sheet

3.0

1

Preliminary specifications subject to change without notice

Filtronic Compound Semiconductors Ltd

Contact Details (UK):

Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com

FMS2014-001

High Power GaAs SPDT Switch

Features:

♦ 3x3x0.9mm Packaged pHEMT Switch

♦ Excellent low control voltage performance

♦ Excellent harmonic performance under

GSM/DCS/PCS/EDGE power levels

♦ Very high Tx-Rx isolation: >28dB typ. at

1.8GHz

♦ Very low Insertion loss: 0.5dB at 1.8GHz

♦ Very low control current

♦ RoHS compliant

Functional Schematic

ANT

V1

RF1

V2

RF2

Description and Applications:

The FMS2014-001 is a low loss, high power and linear single pole double throw Gallium Arsenide

antenna switch designed for use in mobile handset applications.

The die is fabricated using the

Filtronic FL05 0.5

μm switch process technology, which offers excellent performance optimised for

switch applications.

The FMS2014-001 is designed for use in dual/tri and quad band GSM handset

antenna switch modules and RF front-end modules. It can also find use in other applications where

high power and linear RF switching is necessary.

Parameter

Test Conditions

Min

Typ

Max

Units

Insertion Loss

0.5 – 1.0 GHz

1.0 – 2.0 GHz

0.45

0.5

0.5

0.55

dB

dB

Return Loss

0.5 – 2.5 GHz

16

20

dB

Isolation

0.5 – 1.0 GHz

1.0 – 2.0 GHz

-30

-26

-32

-30

dB

dB

2nd Harmonic Level

1 GHz, Pin = +35 dBm, 100% Duty Cycle

2 GHz, Pin = +33 dBm, 100% Duty Cycle

-60

-65

-70

-75

dBc

dBc

3rd Harmonic Level

1 GHz, Pin = +35 dBm, 100% Duty Cycle

2 GHz, Pin = +33 dBm, 100% Duty Cycle

-60

-65

-70

-75

dBc

dBc

Switching speed : Trise, Tfall

Ton, Toff

10% to 90% RF and 90% to 10% RF

50% control to 90% RF and 50% control to 10% RF

<0.3

1.0

μs

μs

Control Current

+35dBm RF input @1GHz

5

10

μA

Note:

External DC blocking capacitors are required on all RF ports (typ: 100pF)

Contact Details (USA): Tel: +1 (408) 850 5790

Fax: +1 (408) 850 5766

Website: www.filtronic.com