Preliminary specifications subject to change without notice

Filtronic Compound Semiconductors Ltd

Tel: +44 (0) 1325 301111

Fax: +44 (0) 1325 306177

Email: sales@filcs.com

4

Preliminary Datasheet v3.0

FPD200P70

FPD200P70 Gain & Power Variation over Temperature

VDS = 5.0V IDS = 30mA at f = 5.8GHz

14.00

15.00

16.00

17.00

18.00

19.00

-40

-20

0

204060

80

Temperature (C)

9.00

10.00

11.00

12.00

13.00

14.00

15.00

16.00

17.00

18.00

19.00

SSG

P1dB

FPD200P70 IP3 Variation over Te mperature

VDS = 5.0V IDS = 30mA at f = 5.8GHz

20.00

21.00

22.00

23.00

24.00

25.00

26.00

27.00

28.00

-40

-20

0

20

40

60

80

Temperature (C)

OIP3

NOTE: Typical power, gain and Intermodulation variation over temperature is shown above. The devices

board is tuned for minimum noise and maximum gain. The 1dB compression point is lower than the typical

number due to the change in matching.

110

FPD200P70 I-V Curves

0

10

20

30

40

50

60

70

80

90

100

110

0

0.5

1

1.5

2

2.5

3

3.5

VDS (V)

ID

(mA)

VG=+0.50V

VG=+0.25V

VG=0V

VG=-0.25V

VG=-0.50V

VG=-0.75V

measurement point avoids the onset of spurious self-oscillation which would normally distort the current

measurement (this effect has been filtered from the I-V curves presented above).