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FPD1000AS Datasheet(PDF) 1 Page - Filtronic Compound Semiconductors |
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FPD1000AS Datasheet(HTML) 1 Page - Filtronic Compound Semiconductors |
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1 / 11 page  1W PACKAGED POWER PHEMT Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com 1 Datasheet v3.0 FPD1000AS FEATURES: • 31 dBm Output Power (P1dB) @1.8GHz • 15 dB Power Gain (G1dB) @ 1.8GHz • 43 dBm Output IP3 • -42 dBc WCDMA ACPR at 21 dBm PCH • 10V Operation • 50% Power-Added Efficiency • Evaluation Boards Available • Suitable for applications to 5 GHz GENERAL DESCRIPTION: The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics. PACKAGE YPICAL APPLICATIONS: in PCS/Cellular • T • Drivers or output stages base station transmitter amplifiers Power applications in WLL/WLAN and WiMax amplifiers ELECTRICAL SPECIFICATIONS: PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Power at 1dB Gain Compression P1dB VDS = 10V; IDS = 200 mA ΓS and ΓL tuned for Optimum IP3 30 31 dBm Power Gain at 1dB Gain Compression G1dB VDS = 10V; IDS = 200 mA ΓS and ΓL tuned for Optimum IP3 13.5 15.0 Maximum Stable Gain S21/S12 MSG VDS = 10 V; IDS = 200mA PIN = 0dBm, 50 Ω system 20 dB Power-Added Efficiency at 1dB Gain Compression PAE VDS = 10V; IDS = 200 mA ΓS and ΓL tuned for Optimum IP3 50 % 3rd-Order Intermodulation Distortion ΓS and ΓL tuned for Optimum IP3 IM3 VDS = 10V; IDS = 200 mA POUT = 19 dBm (single-tone level) -46 dBc Saturated Drain-Source Current IDSS VDS = 1.3 V; VGS = 0 V 480 650 800 mA Maximum Drain-Source Current IMAX VDS = 1.3 V; VGS ≅ +1 V 1100 mA Transconductance GM VDS = 1.3 V; VGS = 0 V 720 mS Gate-Source Leakage Current IGSO VGS = -3 V 20 50 µA Pinch-Off Voltage |VP| VDS = 1.3 V; IDS = 2.4 mA 0.7 0.9 1.4 V Gate-Source Breakdown Voltage |VBDGS| IGS = 2.4 mA 6 V Gate-Drain Breakdown Voltage |VBDGD| IGD = 2.4 mA 20 V Thermal Resistance (channel-to-case) Θ CC See Note on following page 25 °C/W Note: TAMBIENT = 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted) |
Similar Part No. - FPD1000AS_1 |
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Similar Description - FPD1000AS_1 |
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