TM90CZ-M datasheet(3/5 Pages) MITSUBISHI

Part #	TM90CZ-M

Description	HIGH POWER GENERAL USE INSULATED TYPE

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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3 / 5 page

Feb.1999

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VGT=3.0V

IGT=

100mA

PGM=5.0W

VFGM=10V

VGD=0.25V

PG(AV)=

0.50W

Tj=25°C

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Tj=125°C

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RESISTIVE,

INDUCTIVE

LOAD

PER SINGLE

ELEMENT

RESISTIVE,

INDUCTIVE

LOAD

PER SINGLE

ELEMENT

PERFORMANCE CURVES

MAXIMUM ON-STATE CHARACTERISTIC

GATE CHARACTERISTICS

MAXIMUM TRANSIENT THERMAL

IMPEDANCE (JUNCTION TO CASE)

MAXIMUM AVERAGE ON-STATE

POWER DISSIPATION

(SINGLE PHASE HALFWAVE)

LIMITING VALUE OF THE AVERAGE

ON-STATE CURRENT

(SINGLE PHASE HALFWAVE)

RATED SURGE (NON-REPETITIVE)

ON-STATE CURRENT

ON-STATE VOLTAGE (V)

CONDUCTION TIME

(CYCLES AT 60Hz)

TIME (s)

GATE CURRENT (mA)

AVERAGE ON-STATE CURRENT (A)

MITSUBISHI THYRISTOR MODULES

TM90DZ/CZ-M,-H

HIGH POWER GENERAL USE

INSULATED TYPE

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