1 of 12
Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
4
PWR SEN
3
BIAS GND2
2
RF IN
1
16
15
14
13
5
6
7
8
9
Bias
12 RF OUT
11 RF OUT
10 RF OUT
RF2163
3V, 2.5GHz LINEAR POWER AMPLIFIER
The RF2163 is a linear, medium power, high efficiency amplifier IC designed specif-
ically for low voltage operation. The device is manufactured on an advanced Gal-
lium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in 2.5GHz spread-spectrum transmitters.
The device is provided in a 16-pin leadless chip carrier with a backside ground and
is self-contained with the exception of the output matching network and power sup-
ply feed line.
Features
Single 3.3V Power Supply
+30dBm Saturated Output
Power
19dB Small Signal Gain
High Power Added Efficiency
Patent Pending Power Sense
Technology
1800MHz to 2500MHz Fre-
quency Range
Applications
2.5GHz ISM Band Applications
PCS Communication Systems
Wireless LAN Systems
Commercial and Consumer Sys-
tems
Portable Battery Powered Equip-
ment
Broadband Spread-Spectrum
Systems
RF2163
3V, 2.5GHz Linear Power Amplifier
RF2163 PCBA
Fully Assembled Evaluation Board
Rev A6 DS060301
RF21633V,
2.5GHz Lin-
ear Power
Amplifier
RoHS Compliant & Pb-Free Product
Package Style: QFN, 16-Pin, 4 x 4
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