1 of 12
Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
4
VPD2
3
MODE
2
VPD1
13
14
15
16
1
10 VCC
11 VCC1
12 VCC1
5
67
8
9
RF2196
3V PCS LINEAR POWER AMPLIFIER
The RF2196 is a high-power, high-efficiency linear amplifier IC targeting
3V handheld systems. The device is manufactured on an advanced Gal-
lium Arsenide process, and has been designed for use as the final RF
amplifier in 3V CDMA and CDMA2000 handsets as well as other applica-
tions in the 1750MHz to 1910MHz band. The RF2196 has a low power
mode to extend battery life under low output power conditions. The pack-
age is an ultra small 4mmx4mm, 16-pin QFN plastic package with back-
side ground.
Features
Single 3V Supply
29dBm Linear Output Power
35% Linear Efficiency
Low Power Mode (Up to
20dBm)
55mA Idle Current
Applications
3V CDMA PCS Handsets
3V CDMA KPCS Handsets
3V TDMA/GAIT PCS Handsets
3V CDMA 2000 PCS Hand-
sets
Spread-Spectrum Systems
Portable Battery-Powered
Equipment
RF2196
3V PCS Linear Power Amplifier
RF2196PCBA-41X
Fully Assembled Evaluation Board
Rev A3 DS070730
RF21963V
PCS Linear
Power Ampli-
fier
RoHS Compliant & Pb-Free Product
Package Style: QFN, 16-Pin, 4 x 4
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
