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Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
GND
GND
GND
RF IN
GND
RF OUT
VDD
NC
2
1
4
3
7
8
5
6
RF2304
GENERAL PURPOSE LOW-NOISE AMPLIFIER
The RF2304 is a low-noise small-signal amplifier. The device is manufactured on a
low-cost Gallium Arsenide MESFET process, and has been designed for use as a
gain block in high-end communication systems operating from less than 300MHz
to above 2.5GHz. With +6dBm output power, it may also be used as a driver in
transmitter applications, or in highly linear receivers. The device is packaged in an
8-lead plastic package and is self-contained, requiring just an inductor and block-
ing capacitors to operate. The +6dBm output power, combined with the 1.8dB
noise figure at 900MHz allows excellent dynamic range for a variety of receive and
transmit applications.
Features
Single 2.7V to 6.0V Supply
6dBm Output Power
8dB Small Signal Gain at
900MHz
1.8dB Noise Figure at
900MHz
Low DC Current Consumption
of 5mA
300MHz to 2500MHz Opera-
tion
Applications
Receive or Transmit Low-
Noise Amplifiers
FDD and TDD Communication
Systems
Commercial and Consumer
Systems
Portable Battery Powered
Equipment
Wireless LAN
ISM Band Applications
RF2304
General Purpose Low-Noise Amplifier
RF2304PCBA-41X
Fully Assembled Evaluation Board
Rev A7 DS060908
RoHS Compliant & Pb-Free Product
Package Style: SOIC-8
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