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HWF1686NC Datasheet(PDF) 2 Page - Hexawave, Inc |
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HWF1686NC Datasheet(HTML) 2 Page - Hexawave, Inc |
2 / 3 page HWF1686NC L-Band Power FET Non-Via Hole Chip Autumn 2002 V1 Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. Typical Performance (TA=25°°°°C) Output Power, Efficiency & Gain vs. Input Power VDS=10V, IDS=0.5IDSS f=2.4GHz Power Derating Curve 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 14 16 18 20 0 10 20 30 40 50 Gain Pout Pin (dBm) Case Temperature, TC (°C ) η add 0 0.5 1 1.5 2 2.5 3 3.5 4 0 25 50 75 100 125 150 175 200 |
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Similar Description - HWF1686NC |
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