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EGP10GZ Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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EGP10GZ Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 2 page FEATURES Low cost Diffused junction Low leakage Low forward voltage MECHANICAL DATA Terminals: Axial lead ,solderable per MIL- STD-750,Method 2026 Polarity: Color band denotes cathode Weight: 0.012 ounces,0.34 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. EGP 10C EGP 10D UNITS Maximum recurrent peak reverse voltage VRRM 150 200 V Maximum RMS voltage VRMS 105 140 V Maximum DC blocking voltage VDC 150 200 V Maximum average forw ard rectified current 9.5mm lead length @T A=75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J=125 Maximum instantaneous forw ard voltage @ 1.0 A VF V Maximum reverse current @T A=25 at rated DC blocking voltage @T A=125 Maximum reverse recovery time (Note1) trr ns Typical junction capacitance (Note2) CJ pF Typical thermal resistance (Note3) RθJA /W Operating junction temperature range TJ Storage temperature range TSTG GALAXY ELECTRICAL EGP10A(Z) --- EGP10G(Z) Case:JEDEC DO--41,molded plastic Easily cleaned with alcohol,Isopropanol and similar solvents High current capability The plastic material carries U/L recognition 94V-0 EGP 10B HIGH EFFICIENCY RECTIFIER A IF(AV) 1.0 300 DO - 41 VOLTAGE RANGE: 50 --- 400 V CURRENT: 1.0 A 35 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 50 EGP 10G EGP 10F 300 210 EGP 10A - 55 ---- + 150 A 3.Thermal resistance f rom junction to ambient. IFSM IR NOTE: 1. Measured with I F=0.5A, IR=1A, Irr=0.25A. 2. Measured at 1.0MHz and applied rev erse uoltage of 4.0V DC. A - 55 ---- + 150 50 30.0 400 280 400 50 100 100 70 50 15 22 1.25 0.95 5.0 100.0 www.galaxycn.com BL BLGALAXY ELECTRICAL Document Number 0262008 1. |
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