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BYD33D Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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BYD33D Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 2 page FEATURES Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon,Is opropanol and s im ilar s olvents MECHANICAL DATA Cas e:JEDEC DO--15,m olded plas tic Term inals : Axial lead ,s olderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.014ounces ,0.39 gram s Mounting pos ition: Any Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20%. BYD 33K BYD 33M UNITS Maximum recurrent peak reverse voltage VRRM 800 1000 V Maximum RMS voltage VRMS 560 700 V Maximum DC blocking voltage VDC 800 1000 V Maximum average f orw ard rectif ied current 9.5mm lead length, @T A=75 Peak f orw ard surge current 10ms single half -sine-w ave superimposed on rated load @T J=125 Maximum instantaneous f orw ard voltage ( @ 1.0A VF V Maximum reverse current @T A=25 at rated DC blocking voltage @T A=100 Maximum reverse recovery time (Note1) trr ns Typical junction capacitance (Note2) CJ pF Typical thermal resistance (Note3) RθJA K/W Operating junction temperature range TJ Storage temperature range TSTG NOTE: 1. Measured with I F=0. 5A, IR=1A, Irr=0.25A. 3. Thermal resistance f rom junction to am bient. 1.0 100.0 200 BYD33D(Z)---BYD33M(Z) FAST RECOVERY RECT IFIERS VOLTAGE RANGE: 200 --- 1000 V CURRENT: 1.3 A GALAXY ELECTRICAL 600 200 200 1.3 20.0 140 BYD 33D 600 DO - 15 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 280 420 BYD 33G BYD 33J 400 250 300 - 55 ---- + 150 -55 ---- + 150 120 A A 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. IF(AV) 20 A IFSM IR 1.3 www.galaxycn.com BL BLGALAXY ELECTRICAL Document Number 0261040 1. |
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