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L3037 Datasheet(PDF) 10 Page - STMicroelectronics |
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L3037 Datasheet(HTML) 10 Page - STMicroelectronics |
10 / 22 page In case of U.S. application based on L3035 the external components can be calculated suppo- sing: - Rfeed = 400 Ω - Zs = 900 Ω + 2.12µF - Zl = 1650 Ω// (100Ω + 5nF) Loaded Line - Zl = 800 Ω// (100Ω + 50nF) Not Loaded Line -Rp = 62 Ω EXTERNAL COMPONENTS (for US. Application) Name Function Formula Typ. Value CVB Battery Filter 330nF 20% 63VI CVDD Positive Supply Filter 100nF 20% CVSS Negative Supply Filter 100nF 20% RREF Internal Current Reference 23.7K 1% CSVR Battery Ripple Rejection CSVR = 1/(6.28 * fp * 150K) @ fp = 1.6Hz 680nF 20% 60VI CRT Ring Trip & Ground-key Capacitor CRT = (25/fRING) ⋅ 390nF 390nF 20% 6VI RDC DC Feeding Resistance RDC = 10 * (Rfeed - 2Rp) 2.76K 1% CAC AC/DC Splitter CAC = 1 / (6.28 * fsp * RDC) @ fsp = 10Hz 4.7 µF 20% 15VI RS Protection Resistor Image RS = 50 * 2RP 6.2K 1% ZAC 2 Wire AC Impedance ZAC = 50 * (Zs-2Rp) (7) 39K + (180K//55nF) ZA (1) SLIC Impedance Balancing Network ZA = 50 * (Zs-2Rp) (7) 39K + (180K//55nF) RA (1) SLIC Impedance Balancing Network RA = 50 * 2Rp 6.2K 1% ZB (1) Line Impedance Balancing Network ZB = 50 * Zl 82.5K + (5K + 100pF) (3) 40K + (5K + 1nF) (4) CCOMP AC Feedback Compensation CCOMP = 1 / [2 Πfo (100 Rp)] @ fo = 250KHz 100pF 20% CH (1) Trans-hybrid Loss Freq. Comp. CH = CCOMP 100pF 20% RF Feeding Resistance for Ring Inj. ≥ 200Ω (9) 200 Ω 2W RT Feeding Resistance for Ring Inj. ≥ 200Ω (9) 200 Ω 2W RRG Ring Input Resistor RRG = (VRING/25 µA)cos[-2⋅fRING ⋅ T ⋅ 180] (6) CRG Ring Input Capacitor CRG = 25 µA/(VRING ⋅ sin[2 ⋅ fRING⋅T ⋅ 180] ⋅ 2ΠfRING (6) 3.9nF 20% 100V PTC (2) Positive Temp. Coeff. Resistor < 15 Ω 10 Ω RST (2) Tip Buffer Sensing Resistor 10 to 50K Ω 33K 1W 5%(8) RSR (2) Ring Buffer Sensing Resistor 10 to 50K Ω 33K 1W 5%(8) QEXT External Transistor (5) (*) Rp Protection Resistor 30 to 80 Ω (10) 62 Ω D1 Relay Kickback Clamp Diode 1N4148 Notes: (1) These components can be removed and ZB pin shorted to GND when 2/4wire conversion is implemented with 2nd generation COMBO (EG. TS5070FN) (2) In case there is no necessity to recover the unbalance introduced by PTC tolerance pins TIP and STIP can be shorted togheter as pins RING and SRING. In this case also the RP Resistor should be splitted in two parts keeping at least 20 Ω between TIP/RING terminals and protection connection. In this case PTC or fuse resistor (if used) can be placed in series to Rp. (3) Loaded Line. (4) Not Loaded Line. (5) Transistor characteristic: PDISS = 1W (typ. depending on application); hFE ≥ 25; IC ≥ 100mA; VCEO ≥ 60V; fT ≥ 15MHz. (6) VRING: Max Ring Generator Voltage, fRING: Ring Frequency, T: relay response time. Typical value obtained for VRING = 100Vrms, fRING = 25Hz; T = 2.5ms. (7) For details see AN496. (8) RST and RSR wattage should be calculated according to the power cross test specification. (When PTC become open circuit the entire power cross voltage will appear across RSR and RST). (9) In order to optimize the component count it is also possible to use only one resistor in series to the ringing generator. In this case RT = 0 Ω; RF ≥ 400Ω (RF typ. value = 400Ω). (10) Suggested Rp type are 2W wire wound resistors or thick film resistors on ceramic substrate. Fuse function should be included if PTC are not used. (*) ex: BD140; MJE172;MJE350....(SOT32 or SOT82 package available also for surface mount). For low power application (reduced battery voltage) BCP53 (SOT223 surface mount package) can be used. 4M Ω 5% L3037 10/22 |
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