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L3037 Datasheet(PDF) 10 Page - STMicroelectronics

Part # L3037
Description  SUBSCRIBER LINE INTERFACE CIRCUIT
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L3037 Datasheet(HTML) 10 Page - STMicroelectronics

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In case of U.S. application based on L3035 the
external components can be calculated suppo-
sing:
- Rfeed = 400
- Zs = 900
Ω + 2.12µF
- Zl = 1650
Ω// (100Ω + 5nF) Loaded Line
- Zl = 800
Ω// (100Ω + 50nF) Not Loaded Line
-Rp = 62
EXTERNAL COMPONENTS (for US. Application)
Name
Function
Formula
Typ. Value
CVB
Battery Filter
330nF 20% 63VI
CVDD
Positive Supply Filter
100nF 20%
CVSS
Negative Supply Filter
100nF 20%
RREF
Internal Current Reference
23.7K 1%
CSVR
Battery Ripple Rejection
CSVR = 1/(6.28 * fp * 150K)
@ fp = 1.6Hz
680nF
20% 60VI
CRT
Ring Trip & Ground-key Capacitor
CRT = (25/fRING)
⋅ 390nF
390nF 20% 6VI
RDC
DC Feeding Resistance
RDC = 10 * (Rfeed - 2Rp)
2.76K 1%
CAC
AC/DC Splitter
CAC = 1 / (6.28 * fsp * RDC)
@ fsp = 10Hz
4.7
µF
20% 15VI
RS
Protection Resistor Image
RS = 50 * 2RP
6.2K 1%
ZAC
2 Wire AC Impedance
ZAC = 50 * (Zs-2Rp)
(7)
39K + (180K//55nF)
ZA (1)
SLIC Impedance Balancing Network
ZA = 50 * (Zs-2Rp)
(7)
39K + (180K//55nF)
RA (1)
SLIC Impedance Balancing Network
RA = 50 * 2Rp
6.2K 1%
ZB (1)
Line Impedance Balancing Network
ZB = 50 * Zl
82.5K + (5K + 100pF) (3)
40K + (5K + 1nF) (4)
CCOMP
AC Feedback Compensation
CCOMP = 1 / [2
Πfo (100 Rp)]
@ fo = 250KHz
100pF
20%
CH (1)
Trans-hybrid Loss Freq. Comp.
CH = CCOMP
100pF 20%
RF
Feeding Resistance for Ring Inj.
≥ 200Ω (9)
200
Ω 2W
RT
Feeding Resistance for Ring Inj.
≥ 200Ω (9)
200
Ω 2W
RRG
Ring Input Resistor
RRG = (VRING/25
µA)cos[-2⋅fRING ⋅ T ⋅
180] (6)
CRG
Ring Input Capacitor
CRG = 25
µA/(VRING ⋅ sin[2 ⋅ fRING⋅T ⋅
180]
⋅ 2ΠfRING (6)
3.9nF 20%
100V
PTC (2)
Positive Temp. Coeff. Resistor
< 15
10
RST (2)
Tip Buffer Sensing Resistor
10 to 50K
33K 1W 5%(8)
RSR (2)
Ring Buffer Sensing Resistor
10 to 50K
33K 1W 5%(8)
QEXT
External Transistor (5)
(*)
Rp
Protection Resistor
30 to 80
Ω (10)
62
D1
Relay Kickback Clamp Diode
1N4148
Notes:
(1) These components can be removed and ZB pin shorted to GND when 2/4wire conversion is implemented with 2nd generation COMBO (EG.
TS5070FN)
(2) In case there is no necessity to recover the unbalance introduced by PTC tolerance pins TIP and STIP can be shorted togheter as pins
RING and SRING. In this case also the RP Resistor should be splitted in two parts keeping at least 20
Ω between TIP/RING terminals and
protection connection. In this case PTC or fuse resistor (if used) can be placed in series to Rp.
(3) Loaded Line.
(4) Not Loaded Line.
(5) Transistor characteristic: PDISS = 1W (typ. depending on application); hFE
≥ 25; IC ≥ 100mA; VCEO ≥ 60V; fT ≥ 15MHz.
(6) VRING: Max Ring Generator Voltage, fRING: Ring Frequency, T: relay response time. Typical value obtained for VRING = 100Vrms, fRING = 25Hz;
T = 2.5ms.
(7) For details see AN496.
(8) RST and RSR wattage should be calculated according to the power cross test specification. (When PTC become open circuit the entire
power cross voltage will appear across RSR and RST).
(9) In order to optimize the component count it is also possible to use only one resistor in series to the ringing generator. In this case RT = 0
Ω;
RF
≥ 400Ω (RF typ. value = 400Ω).
(10) Suggested Rp type are 2W wire wound resistors or thick film resistors on ceramic substrate.
Fuse function should be included if PTC are not used.
(*) ex: BD140; MJE172;MJE350....(SOT32 or SOT82 package available also for surface mount).
For low power application (reduced battery voltage) BCP53 (SOT223 surface mount package) can be used.
4M
Ω 5%
L3037
10/22


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