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EB1500DFN-BB Datasheet(PDF) 1 Page - Filtronic Compound Semiconductors |
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EB1500DFN-BB Datasheet(HTML) 1 Page - Filtronic Compound Semiconductors |
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1 / 10 page  LOW NOISE HIGH LINEARITY PACKAGED PHEMT Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com 1 Datasheet v3.0 FPD1500DFN FEATURES (1850MHZ): • 27 dBm Output Power (P1dB) • 18 dB Small-Signal Gain (SSG) • 1.2 dB Noise Figure • 42 dBm Output IP3 • 45% Power-Added Efficiency • FPD1500DFN - RoHS compliant GENERAL DESCRIPTION: The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier Gate, defined by high-resolution stepper- based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels. PACKAGE: RoHS TYPICAL APPLICATIONS: • Drivers or output stages in PCS/Cellular base station transmitter amplifiers • High intercept-point LNAs • WLL and WLAN systems, and other types of wireless infrastructure systems. ELECTRICAL SPECIFICATIONS: PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Power at 1dB Gain Compression P1dB VDS = 5 V; IDS = 50% IDSS 26 27 dBm Small-Signal Gain SSG VDS = 5 V; IDS = 50% IDSS 16.0 18 dB Power-Added Efficiency PAE VDS = 5 V; IDS = 50% IDSS; POUT = P1dB 45 % Noise Figure NF VDS = 5 V; IDS = 50% IDSS 1.2 dB Output Third-Order Intercept Point (from 15 to 5 dB below P1dB) IP3 VDS = 5V; IDS = 50% IDSS Matched for optimal power Matched for best IP3 40 42 dBm Saturated Drain-Source Current IDSS VDS = 1.3 V; VGS = 0 V 375 465 550 mA Maximum Drain-Source Current IMAX VDS = 1.3 V; VGS ≅ +1 V 750 mA Transconductance GM VDS = 1.3 V; VGS = 0 V 400 mS Gate-Source Leakage Current IGSO VGS = -5 V 1 15 µA Pinch-Off Voltage |VP| VDS = 1.3 V; IDS = 1.5 mA 0.7 0.9 1.3 V Gate-Source Breakdown Voltage |VBDGS| IGS = 1.5 mA 12 16 V Gate-Drain Breakdown Voltage |VBDGD| IGD = 1.5 mA 12 16 V Note: TAMBIENT = 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted) |
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