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2SA1586W Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

Part No. 2SA1586W
Description  PNP Silicon Epitaxial Planar Transistor
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Maker  BILIN [Galaxy Semi-Conductor Holdings Limited]
Homepage  http://www.galaxycn.com
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 2 page
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BL Galaxy Electrical
Production specification
PNP Silicon Epitaxial Planar Transistor
2SA1586W
Document number: BL/SSSTF032
www.galaxycn.com
Rev.A
2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=-100μA,IE=0
-50
V
Collector-emitter breakdown
voltage
V(BR)CEO
IC=-1mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100μA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V,IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-0.1
μA
DC current gain
hFE
VCE=-6V,IC=-2mA
70
400
Collector-emitter saturation voltage
VCE(sat)
IC=-100mA, IB=-10mA
-0.1
-0.3
V
Transition frequency
fT
VCE=-10V, IC= -1mA
80
MHz
Collector output capacitance
Cob
VCB=-10V,IE=0,f=1MHz
4
7
pF
CLASSIFICANTION OF hFE
Rank
O
Y
GR
Range
70-140
120-240
200-400
marking
SO
SY
SG
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified




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