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MLX80001KLQD Datasheet(PDF) 6 Page - Melexis Microelectronic Systems

Part # MLX80001KLQD
Description  4-channel Master LIN Transceiver
Download  28 Pages
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Manufacturer  MELEXIS [Melexis Microelectronic Systems]
Direct Link  http://www.melexis.com
Logo MELEXIS - Melexis Microelectronic Systems

MLX80001KLQD Datasheet(HTML) 6 Page - Melexis Microelectronic Systems

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MLX80001
4-channel Master LIN Transceiver
MLX80001 – Datasheet
Page 6 of 28
3901080001
March 2007
Rev 001
2.2
Absolute Maximum Ratings
Parameter
Symbol
Condition
Min
Max
Unit
t < 1 min
30
Battery Supply Voltage
VS
ISO 7637/2 pulse 5, t < 400ms
-0.3
45
V
Transients at battery supply voltage
VVS.tr1
ISO 7637/2 pulse 1[1]
-100
V
Transients at battery supply voltage
VVS.tr2
ISO 7637/3 pulse 2[1]
+50
V
Transients at high voltage signal pins
VLINx..tr1
ISO 7637/3 pulses 1[2]
-30
V
Transients at high voltage signal pins
VLINx..tr2
ISO 7637/3 pulses 2[2]
+30
V
Transients at high voltage signal and power supply
pins
VHV..tr3
ISO 7637/2 pulses 3A, 3B [3]
-200
+200
V
DC voltage LIN
VLIN_DC
t < 500ms , Vs = 18V
Vs = 0V
-22
-40
+40
V
DC voltage logic I/O’s
Vlogic_DC
-0.3
+7
V
ESD capability any pins
VESDHB
Human body model,
equivalent to discharge
100pF with 1.5k
Ω,
-2
+2
kV
ESD capability LINx
VESDHB_HV
Human body model,
equivalent to discharge
100pF with 1.5k
Ω,
-4
+4
kV
Maximum latch – up free current at any Pin
ILATCH
-500
+500
mA
Maximum power dissipation [4]
Ptot
Tamb = +125 °C
Tamb = +105 °C
Tamb = + 95 °C
0.75
1.3
1.6
W
Thermal impedance
ΘJA
in free air
34
K/W
Storage temperature
Tstg
-55
+150
°C
Junction temperature
Tvj
-40
+150
°C
[1]
ISO 7637/2 test pulses are applied to VS via a reverse polarity diode and >10uF blocking capacitor.
[2]
ISO 7637/3 test pulses are applied to LIN via a coupling capacitance of 100nF.
[3]
ISO 7637/3 test pulses are applied to LIN via a coupling capacitance of 1nF. ISO 7637/2 test pulses are applied to VS via a
reverse polarity diode and >10uF blocking capacitor
[4]
Simulated values for low conductance board (JEDEC)


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