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IRF530FP Datasheet(PDF) 1 Page - STMicroelectronics

Part # IRF530FP
Description  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

IRF530FP Datasheet(HTML) 1 Page - STMicroelectronics

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IRF530FP
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
s
TYPICAL RDS(on) = 0.12
Ω
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
oC
s
LOW GATE CHARGE
s
AVALANCHE RUGGED TECHNOLOGY
s
APPLICATION ORIENTED
CHARACTERIZATION
s
HIGH CURRENT CAPABILITY
s
175
oC OPERATING TEMPERATURE
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
DC-DC & DC-AC CONVERTER
s
AUTOMOTIVE ENVRONMENT (INJECTION,
ABS, AIR-BAG, LAMP DRIVERS, Etc)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
100
V
VDGR
Drain- gate Voltage (RGS = 20 k
Ω)
100
V
VGS
Gate-source Voltage
± 20
V
ID
Drain Current (continuous) at Tc = 25
oC
10
A
ID
Drain Current (continuous) at Tc = 100
oC7
A
IDM(
•)
Drain Current (pulsed)
64
A
Ptot
Total Dissipation at Tc = 25
oC35
W
Derating Factor
0.23
W/
oC
VISO
Insulation Withstand Voltage (DC)
2000
V
Tstg
Storage Temperature
-65 to 175
oC
Tj
Max. Operating Junction Temperature
175
oC
(
•) Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
IRF530FP
100 V
< 0.16
Ω
10 A
March 1998
1
2
3
TO-220FP
1/5


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