CMM0014-BD Vd=8.0 V, Id=280 mA

1.0E+05

1.0E+06

1.0E+07

1.0E+08

1.0E+09

55

65

75

85

95

105

115

125

Backplate Temperature (deg C)

CMM0014-BD Vd=8.0 V, Id=280 mA

1.00E-03

1.00E-02

1.00E-01

1.00E+00

1.00E+01

55

65

75

85

95

105

115

125

Baseplate Temperature (deg C)

CMM0014-BD Vd=8.0 V, Id=280 mA

90

100

110

120

130

140

150

160

170

55

65

75

85

95

105

115

125

Backplate Temperature (deg C)

Page 5 of 6

2.0-22.0 GHz GaAs MMIC

Power Amplifier

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©2007 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

CMM0014-BD

April 2007 - Rev 26-Apr-07

App Note [1] Biasing - As shown in the bonding diagram, this device operates using a self-biased architecture and only requires one drain

bias. Bias is nominally Vd=8V, Id=300 mA. For additional assistance in setting current via source resistor, see source resistance table below.

App Note [2] Bias Arrangement - Each DC pad (Vd) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible.

Additional DC bypass capacitance (~0.01 uF) is also recommended. Additionally, to achieve the required broadband decoupling network a

high-Q Drain bias inductor with high-Q bypass capacitor is needed. The proper network is necessary in order to bring Drain bias into the

device with minimal impact on RF performance. The high-Q inductor is typically an air coil that can be purchased from an air coil

manufacturer (Microwave Components or Piconics for example). The air coil needs to have minimum current handling capability, thus

planned operating current needs to be defined and considered before defining actual air coil to be used. Mimix recommends 1.4 mil

diameter gold wire and 4 turns as a starting point and may need to be optimized based on the actual application. Self-resonance of the bias

inductor causes degradation in performance at both the low and high ends of the band. The self resonance is sensitive to spacing between

turns and number of turns used. For example, the more turns in the Drain bias inductor the lower the self-resonant frequency of the inductor

creating high end RF performance degradation. The opposite is true for a smaller number of turns.

MTTF Graphs

These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.

CMM0014 - Source Resistance Table

Left

Center

Corner

3.3

2.1

1.2

0

0

0

Infinity

10

0

3.30

01

0

2.10

11

0

1.28

00

1

1.20

10

1

0.88

01

1

0.76

11

1

0.62

Net R