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S-1000C20-I4T1G Datasheet(PDF) 10 Page - Seiko Instruments Inc |
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10 page 
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Rev.2.3_00 10 Seiko Instruments Inc. 2. CMOS output products Table 10 (Ta = 25 °C unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Measure- ment circuit Detection voltage *1 −VDET − −VDET(S) ×0.99 −VDET(S) −VDET(S) ×1.01 V 1 Hysteresis width VHYS − −VDET ×0.03 −VDET ×0.05 −VDET ×0.07 V 1 VDD = −VDET(S)+ 1.5 V S-1000C15 to 39 − 350 900 nA 2 Current consumption ISS VDD = 5.5 V S-1000C40 to 46 − 350 900 nA 2 Operating voltage VDD − 0.95 − 5.5 V 1 Output transistor, Nch, VDS = 0.5 V, VDD = 1.2 V 1.36 2.55 − mA 3 Output current IOUT Output transistor, Pch, VDS = 0.5 V, VDD = 5.5 V 1.71 2.76 − mA 4 Response time tPLH − − − 60 µs 1 Detection voltage temperature coefficient *2 ∆−VDET ∆Ta•−VDET Ta = −40 to +85 °C − ±100 ±350 ppm/ °C 1 *1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the detection voltage range in Table 2.) *2. The temperature change ratio in the detection voltage [mV / °C] is calculated by using the following equation. [] () [] [] 1000 C / ppm V Ta V V Typ. V C / mV Ta V DET DET DET(S) DET ÷ ° − ∆ − ∆ × − = ° ∆ − ∆ • *3 *2 *1 *1. Temperature change ratio of the detection voltage *2. Specified detection voltage *3. Detection voltage temperature coefficient |
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