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S-80937CNPF-G87TFG Datasheet(PDF) 8 Page - Seiko Instruments Inc |
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S-80937CNPF-G87TFG Datasheet(HTML) 8 Page - Seiko Instruments Inc |
8 / 36 page ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) S-809xxC Series Rev.3.3_00 Seiko Instruments Inc. 8 Electrical Characteristics 1. Nch Open-drain Output Products Table 7 (Ta =25°C unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test circuit Detection voltage *1 −VDET — −VDET(S) ×0.98 −VDET(S) −VDET(S) ×1.02 V 1 Hysteresis width VHYS S-80913 to 14 −VDET ×0.03 −VDET ×0.05 −VDET ×0.08 S-80915 to 60 −VDET ×0.03 −VDET ×0.05 −VDET ×0.07 Current consumption ISS VDD =2.0 V S-80913 to 14 — 1.0 2.5 µA 2 VDD =3.5 V S-80915 to 26 — 1.1 2.8 VDD =4.5 V S-80927 to 39 — 1.2 3.0 VDD =6.0 V S-80940 to 54 — 1.3 3.3 VDD =7.5 V S-80955 to 60 — 1.4 3.5 Operating voltage VDD — 0.7 — 10.0 V 1 Output current IOUT Output transistor Nch, VDS =0.5 V VDD =0.95 V S-80913 to 14 0.23 0. 64 — mA 3 VDD =1.2 V S-80915 to 60 0.59 1.36 — VDD =2.4 V S-80927 to 60 2.88 4.98 — Leakage current ILEAK Output transistor, Nch, VDS =10.0 V, VDD=10.0 V — — 0.1 µA Delay time tD CD =4.7 nF VDD =2.0 V S-80913 to 14 2.7 3.6 4.5 ms 4 VDD =3.5 V S-80915 to 26 20 27 34 VDD =4.5 V S-80927 to 39 VDD =6.0 V S-80940 to 54 VDD =7.5 V S-80955 to 60 Detection voltage temperature coefficient *2 DET DET V Ta V − • ∆ − ∆ Ta =−40°C to +85°C — ±100 ±350 ppm/ °C 1 *1. −VDET: Actual detection voltage, −VDET(S): Specified detection voltage (The center value of detection voltage range in Table 1.) *2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following quation. [] () [] [] 1000 C ppm/ V Ta V V Typ. V C mV/ Ta V DET DET DET DET ÷ ° − ∆ − ∆ × − = ° ∆ − ∆ • 3 * 2 * *1 *1. Temperature change ratio of the detection voltage *2. Specified detection voltage *3. Detection voltage temperature coefficient |
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