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ESM765PI-800 Datasheet(PDF) 2 Page - STMicroelectronics |
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ESM765PI-800 Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 4 page Symbol Parameters Test conditions Min. Typ. Max. Unit IR * Reverse leakage current Tj = 25 °CVR = VRRM 20 mA Tj = 100 °C 1mA VF ** Forward voltage drop Tj = 25 °CIF = 10 A 1.4 V Tj = 100 °C 1.35 Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation : P = 1.2 x IF(AV) + 0.015 x IF 2 (RMS) VF = 1.2 + 0.015 IF STATIC ELECTRICAL CHARACTERISTICS Symbol Test conditions Min. Typ. Max. Unit trr Tj = 25 °CIF = 1A dIF/dt = - 15A/ µs VR = 30V 300 ns Qrr Tj = 25 °CIF = 10A dIF/dt = - 50A/µs VR = 200V 2.3 µC RECOVERY CHARACTERISTICS Symbol Parameter Value Unit Rth(j-c) Junction to case 3.5 °C/W THERMAL RESISTANCES Fig. 1: Low frequency power losses versus average current. Fig. 2: Peak current versus form factor. ESM765PI-800 2/4 |
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