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S-1000C32-N4T1G Datasheet(PDF) 10 Page - Seiko Instruments Inc

Part No. S-1000C32-N4T1G
Description  ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
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Maker  SII [Seiko Instruments Inc]
Homepage  http://www.sii.co.jp
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 10 page
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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-1000 Series
Rev.2.3_00
10
Seiko Instruments Inc.
2. CMOS output products
Table 10
(Ta
= 25 °C unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Measure-
ment
circuit
Detection voltage
*1
−VDET
−VDET(S)
×0.99
−VDET(S) −VDET(S)
×1.01
V
1
Hysteresis width
VHYS
−VDET
×0.03
−VDET
×0.05
−VDET
×0.07
V
1
VDD
= −VDET(S)+ 1.5 V S-1000C15 to 39
350
900
nA
2
Current consumption
ISS
VDD
= 5.5 V
S-1000C40 to 46
350
900
nA
2
Operating voltage
VDD
0.95
5.5
V
1
Output transistor,
Nch, VDS
= 0.5 V, VDD = 1.2 V
1.36
2.55
mA
3
Output current
IOUT
Output transistor,
Pch, VDS
= 0.5 V, VDD = 5.5 V
1.71
2.76
mA
4
Response time
tPLH
60
µs
1
Detection voltage
temperature coefficient
*2
∆−VDET
∆Ta•−VDET
Ta
= −40 to +85 °C
±100
±350
ppm/
°C
1
*1.
−VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the detection voltage
range in Table 2.)
*2.
The temperature change ratio in the detection voltage [mV / °C] is calculated by using the following equation.
[]
()
[]
[] 1000
C
/
ppm
V
Ta
V
V
Typ.
V
C
/
mV
Ta
V
DET
DET
DET(S)
DET
÷
°
×
=
°
*3
*2
*1
*1.
Temperature change ratio of the detection voltage
*2.
Specified detection voltage
*3.
Detection voltage temperature coefficient




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