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S-1200B39-I6T2G Datasheet(PDF) 10 Page - Seiko Instruments Inc

Part # S-1200B39-I6T2G
Description  HIGH RIPPLE-REJECTION LOW DROPOUT LOW INPUT-AND-OUTPUT CAPACITANCE CMOS VOLTAGE REGULATOR
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Manufacturer  SII [Seiko Instruments Inc]
Direct Link  http://www.sii.co.jp
Logo SII - Seiko Instruments Inc

S-1200B39-I6T2G Datasheet(HTML) 10 Page - Seiko Instruments Inc

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HIGH RIPPLE-REJECTION LOW DROPOUT LOW INPUT-AND-OUTPUT CAPACITANCE CMOS VOLTAGE REGULATOR
S-1200 Series
Rev.3.2_00
Seiko Instruments Inc.
10
Standard Circuit
ON/OFF
VSS
VOUT
VIN
CIN
*1
CL
*2
Input
Output
GND
Single GND
*1. CIN is a capacitor for stabilizing the input.
*2. A ceramic capacitor of 0.1
µF or more can be used for CL.
Figure 10
Caution The above connection diagram and constant will not guarantee successful operation.
Perform thorough evaluation using the actual application to set the constant.
Application Conditions
Input capacitor (CIN):
0.1
µF or more
Output capacitor (CL):
0.1
µF or more
ESR of output capacitor:
1.0
Ω or less
Caution A general series regulator may oscillate, depending on the external components selected.
Check that no oscillation occurs with the application using the above capacitor.
Selection of Input and Output Capacitors (CIN, CL)
The S-1200 Series requires an output capacitor between the VOUT and VSS pins for phase compensation.
Operation is stabilized by a ceramic capacitor with an output capacitance of 0.1
µF or more in the entire
temperature range. However, when using an OS capacitor, tantalum capacitor, or aluminum electrolytic
capacitor, a ceramic capacitor with a capacitance of 0.1
µF or more and an ESR of 1.0 Ω or less is required.
The value of the output overshoot or undershoot transient response varies depending on the value of the output
capacitor. The required capacitance of the input capacitor differs depending on the application.
The recommended value for an application is 0.1
µF or more for CIN and 0.1 µF or more for CL; however, when
selecting the output capacitor, perform sufficient evaluation, including evaluation of temperature characteristics,
on the actual device.


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