BLF6G10LS-200 datasheet(1/11 Pages) NXP

Part #	BLF6G10LS-200

Description	Power LDMOS transistor

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Manufacturer	NXP [NXP Semiconductors]

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1.

Product proﬁle

1.1 General description

200 W LDMOS power transistor for base station applications at frequencies from

800 MHz to 1000 MHz.

[1]

Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier

spacing 5 MHz.

1.2 Features

I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a

supply voltage of 28 V and an IDq of 1400 mA:

N Average output power = 40 W

N Power gain = 20 dB

N Efﬁciency = 27 %

N ACPR = −41 dBc

I Easy power control

I Integrated ESD protection

I Excellent ruggedness

I High efﬁciency

I Excellent thermal stability

I Designed for broadband operation (800 MHz to 1000 MHz)

I Internally matched for ease of use

I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

BLF6G10LS-200

Power LDMOS transistor

Rev. 01 — 18 January 2008

Preliminary data sheet

Table 1.

Typical performance

Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

Mode of operation

f

VDS

PL(AV)

Gp

η

D

ACPR

(MHz)

(V)

(W)

(dB)

(%)

(dBc)

2-carrier W-CDMA

869 to 894

28

40

20

27

−41[1]

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

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BLF6G10LS-200 Datasheet(PDF) 1 Page - NXP Semiconductors

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