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PESD3V3V4UG Datasheet(PDF) 5 Page - NXP Semiconductors

Part # PESD3V3V4UG
Description  Very low capacitance unidirectional quadruple ESD protection diode arrays
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

PESD3V3V4UG Datasheet(HTML) 5 Page - NXP Semiconductors

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PESDXV4UF_G_W_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 28 January 2008
5 of 16
NXP Semiconductors
PESDxV4UF/G/W
Very low capacitance quadruple ESD protection diode arrays
6.
Characteristics
Table 9.
Characteristics
Tamb =25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Per diode
VRWM
reverse standoff voltage
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
-
-
3.3
V
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
-
-
5.0
V
IRM
reverse leakage current
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
VRWM = 3.3 V
-
40
300
nA
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
VRWM = 5.0 V
-
3
25
nA
VBR
breakdown voltage
IR =1mA
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
5.3
5.6
5.9
V
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
6.4
6.8
7.2
V
Cd
diode capacitance
f=1MHz
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
VR = 0 V
-
15
18
pF
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
VR = 3.3 V
-
9
12
pF
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
VR = 0 V
-
12
15
pF
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
VR = 5 V
-
69pF


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