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D45H5 Datasheet(PDF) 2 Page - STMicroelectronics |
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D45H5 Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 4 page THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.5 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = rated VCEO -10 µA IEBO Emitter Cut-off Current (IC = 0) VEB = -5V -100 µA VCEO(sus) ∗ Collector-Emitter Sustaining Voltage IC = -100 mA for D45H5 for D45H8 for D45H11 -45 -60 -80 V V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = -8 A IB = -0.4 A IC = -8 A IB = -0.8 A -1 -1 V V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = -8 A IB = -0.8 A -1.5 V hFE ∗ DC Current Gain IC = -2 A VCE = -1 V IC = -4 A VCE = -1 V 60 40 120 70 ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % D45H5/D45H8/D45H11 2/4 |
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