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SGSF324 Datasheet(PDF) 2 Page - STMicroelectronics |
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SGSF324 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 6 page  THERMAL DATA Rthj-ca se Rthj- amb Thermal Resistance Junction-Case Max Thermal Resistance Junction-Ambient Max 1.78 62.5 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it ICES Collect or Cut-off Current (VBE =0) VCE = 1200 V 200 µA ICEO Collect or Cut-off Current (IB =0) VEC =380 V VEC =600 V 200 µA mA IEBO Emitt er Cut-off Current (IC =0) VBE =7 V 1 mA VCEO(sus ) ∗ Collector-Emitter Sustaining Voltage IC = 100 mA 600 V VCE(sat) ∗ Collector-Emitter Saturat ion Voltage IC =1. 75 A IB =0.35 A IC =1. 25 A IB =0.18 A 1.5 1.5 V V VBE(s at) ∗ Base-Emitter Saturat ion Voltage IC =1. 75 A IB =0.35 A IC =1.25 A IB =0.18 A 1.5 1.5 V V tON ts tf Turn-on T ime St orage Time Fall T ime RESI STIVE LO AD vCC =250 v IC =1.75 A IB1 =0.35 A IB1 =-0.7 A 0.6 3 0.2 1 4.5 0.35 µs µs µs tON ts tf Turn-on T ime St orage Time Fall T ime RESI STIVE LO AD VCC =250 v IC =1.75 A IB1 =0.35 A IB1 =-0.7 A With Ant isaturation Network 0.6 2 0. 16 µs µs µs tON ts tf Turn-on T ime St orage Time Fall T ime RESI STIVE LO AD VCC =250 V IC =1.75 A IB1 =0.35 A VBE (off) = - 5 V 0.6 1 0.5 µs µs µs ts tf St orage Time Fall T ime INDUCTIVE LOAD IC =1. 75 A hFE =5 VCL = 450 V VBE(off) =-5 V L = 300 µHRBB =2 Ω 1.2 0.1 2.5 0.2 µs µs ts tf St orage Time Fall T ime INDUCTIVE LOAD IC =1. 75 A hFE =5 VCL = 450 V VBE(off) =-5 V L = 300 µHRBB =2 Ω Tc = 100 oC 3.7 0.3 µs µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % SGSF324 2/6 |
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