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BUV298V Datasheet(PDF) 1 Page - STMicroelectronics |
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BUV298V Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 7 page  BUV298V NPN TRANSISTOR POWER MODULE s NPN TRANSISTOR s HIGH CURRENT POWER BIPOLAR MODULE s VERY LOW Rth JUNCTION CASE s SPECIFIED ACCIDENTAL OVERLOAD AREAS s ISOLATED CASE (2500V RMS) s EASY TO MOUNT s LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS: s MOTOR CONTROL s SMPS & UPS s WELDING EQUIPMENT INTERNAL SCHEMATIC DIAGRAM June 1997 ISOTOP Pin 4 not con nected ABSOLUTE MAXIMUM RATINGS Symbol Parameter Val ue Uni t VCEV Collect or-Emitt er Voltage (VBE = -5 V) 1000 V VCEO(sus) Collector-Emitter Voltage (IB = 0) 450 V VEBO Emitt er-Base Voltage (IC =0) 7 V IC Collect or Current 50 A ICM Collect or Peak Current (tp =10 ms) 75 A IB Base Current 10 A IBM Base Peak Current (tp =10 ms) 16 A Ptot Total Dissipation at Tc =25 oC 250 W Tstg St orage Temperature -55 to 150 oC Tj Max. Operating Junction Temperature 150 oC VISO Insulation W it hst and Volt age (AC-RMS) 2500 V 1/7 |
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Similar Description - BUV298V |
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