STP13NM50N datasheet(4/17 Pages) STMICROELECTRONICS

Part #	STP13NM50N

Description	N-channel 500V - 0.250廓 - 12A - TO-220/FP - TO-247-I2/D2PAK Second generation MDmesh??Power MOSFET

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Electrical characteristics

STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N

4/17

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1mA, VGS= 0

500

V

dv/dt(1)

1.

Characteristics value at turn off on inductive load

Drain-source voltage slope

Vdd=400V,Id=12A,

Vgs=10V

30

V/ns

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating,Tc=125°C

1

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20V

100

nA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250µA

23

4

V

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 6A

0.25

0.32

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward transconductance

VDS =15V, ID= 6A

8S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =50V, f=1MHz, VGS=0

960

50

5

pF

Coss eq.

(2)

2.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS=0, VDS =0V to 480V

110

pF

Rg

Gate input resistance

f=1MHz Gate DC Bias=0

test signal level=20mV

open drain

5

Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=400V, ID = 12A

VGS =10V

(see Figure 18)

30

5

15

nC

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