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BU810 Datasheet(PDF) 2 Page - STMicroelectronics |
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BU810 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 4 page  THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.66 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current (VBE = 0) VCE = 600 V 200 µA ICEO Collector Cut-off Current (IB = 0) VCE = 400 V 1 mA IEBO ∗ Emitter Cut-off Current (IC = 0) VEB = 5 V 150 mA VCEO(sus) ∗ Collector-Emitter Sustaining Voltage IC = 0.1 A 400 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 2 A IB = 20 mA IC = 4 A IB = 200 mA IC = 7 A IB = 0.7 A 2 2.5 3 V V V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = 2 A IB = 20 mA IC = 4 A IB = 200 mA 2.2 3 V V VF Diode Forward Voltage IF = 7 A 3 V RESISTIVE SWITCHING TIMES Symbol Parameter Test Conditions Min. Typ. Max. Unit ton ts tf Turn-on Time Storage Time Fall Time VClamp = 250V IC = 2A IB1 = 20mA VBE(off) = -5 V 0.6 1.5 0.5 µs µs µs INDUCTIVE SWITCHING TIMES Symbol Parameter Test Conditions Min. Typ. Max. Unit ts tf Storage Time Fall Time VClamp = 250V IC = 2A IB1 = 20mA VBE(off) = -5 V L = 500 µH 1.5 0.4 µs µs ts tf Storage Time Fall Time VClamp = 250V IC = 7A IB1 = 0.7A VBE(off) = -5 V L = 500 µH 1.5 0.4 µs µs * Pulsed : Pulse duration = 300 µs, duty cycle = 2% BU810 2/4 |
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