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NX3L1G66GM Datasheet(PDF) 10 Page - NXP Semiconductors |
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NX3L1G66GM Datasheet(HTML) 10 Page - NXP Semiconductors |
10 / 16 page NX3L1G66_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 3 January 2008 10 of 16 NXP Semiconductors NX3L1G66 Low-voltage analog switch [1] fi is biased at 0.5VCC. 12.3 Test circuits Qinj charge injection fi = 1 MHz; CL = 0.1 nF; RL =1 MΩ; Vgen =0V; Rgen =0 Ω; see Figure 19 VCC = 1.5 V - 3 - pC VCC = 1.8 V - 3 - pC VCC = 2.5 V - 3 - pC VCC = 3.3 V - 3 - pC Table 12. Additional dynamic characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V); VI = GND or VCC (unless otherwise specified); tr = tf ≤ 2.5 ns. Symbol Parameter Conditions 25 °C Unit Min Typ Max Fig 15. Test circuit for measuring total harmonic distortion 001aah378 VIH VCC 0.5VCC Z/Y Y/Z E fi RL D Adjust fi voltage to obtain 0 dBm level at output. Increase fi frequency until dB meter reads −3dB. Fig 16. Test circuit for measuring the frequency response when channel is in ON-state 001aah379 VIH VCC 0.5VCC Z/Y Y/Z E fi RL dB |
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