BD677 datasheet(2/6 Pages) STMICROELECTRONICS

Part #	BD677

Description	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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THERMAL DATA

Rthj-ca se

Rthj- amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

3.12

100

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICBO

Collect or Cut-off

Current (IE =0)

VCE =rated VCBO

TC = 100

oC

0.2

2

mA

ICEO

Collect or Cut-off

Current (IB =0)

VCE = half rated VCEO

0.5

mA

IEBO

Emitt er Cut-off Current

(IC =0)

VEB =5 V

2mA

VCEO(sus )

∗

Collect or-Emitter

Sustaining Voltage

IC =50 mA

for BD677/677A/678/ 678A

for BD679/679A/680/ 680A

for BD681/682

60

80

100

V

VCE(sat)

∗

Collect or-Emitter

Saturat ion Voltage

for BD677/678/ 679/680/681/682

IC =1.5 A

IB =30 mA

for BD677A/ 678A/679A/680A

IC =2 A

IB =40 mA

2.5

2.8

V

VBE

∗

Base-Emitt er Voltage

for BD677/678/ 679/680/681/682

IC =1. 5 A

VCE =3 V

for BD677A/ 678A/679A/680A

IC =2 A

VCE =3 V

2.5

V

hFE

∗

DC Current G ain

for BD677/678/ 679/680/681/682

IC =1.5 A

VCE =3 V

for BD677A/ 678A/679A/680A

IC =2 A

VCE =3 V

750

hfe

Small Signal Current

Gain

IC =1. 5 A

VCE =3 V

f =1MHz

1

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Areas

Derating Curve

BD677/677A/678/678A/679/679A/680/680A/681/682

2/6

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