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HMC396 Datasheet(PDF) 5 Page - Hittite Microwave Corporation |
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HMC396 Datasheet(HTML) 5 Page - Hittite Microwave Corporation |
5 / 6 page 2 2 - 12 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Circuit Recommended Component Values Component Frequency (MHz) 50 1000 4000 8000 L1 270 nH 56 nH 8.2 nH 2.2 nH C1, C2 0.01 μF 100 pF 100 pF 100 pF Pad Number Function Description Interface Schematic 1RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 2RFOUT RF output and DC Bias for the output stage. Die Bottom GND Die bottom must be connected to RF/DC ground. Pad Descriptions Note: 1. Select Rbias to achieve Icq using equation below, Rbias > 22 Ohm. 2. External blocking capacitors are required on RFIN and RFOUT. Icq = Vs - 3.9 Rbias HMC396 v01.1007 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz |
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