MBM29LV320TE80PBT datasheet(4/68 Pages) SPANSION

Part #	MBM29LV320TE80PBT

Description	FLASH MEMORY

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DS05-20894-5E

FUJITSU SEMICONDUCTOR

DATA SHEET

Retired Product

DS05-20894-5E_July 31, 2007

FLASH MEMORY

CMOS

32 M (4 M

× 8/2 M × 16) BIT

MBM29LV320TE 80/90/10

MBM29LV320BE80/90/10

■ DESCRIPTION

The MBM29LV320TE/BE is 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words

of 16 bits each. The device is offered in a 48-pin TSOP (1) and 63-ball FBGA packages. This device is designed

to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required

for write or erase operations. The device can also be reprogrammed in standard EPROM programmers.

The standard device offers access times 80 ns, 90 ns and 100 ns, allowing operation of high-speed microproces-

sors without wait state. To eliminate bus contention the device has separate chip enable(CE), write enable(WE)

and output enable (OE) controls.

(Continued)

■ PRODUCT LINE UP

■ PACKAGES

(Continued)

Part No.

MBM29LV320TE/BE

80

90

100

Power Supply Voltage (V)

VCC

= 3.3 V

VCC

= 3.0 V

Max Address Access Time (ns)

80

90

100

Max CE Access Time (ns)

80

90

100

Max OE Access Time (ns)

30

35

+0.3 V

−0.3 V

+0.6 V

−0.3 V

48-pin plastic TSOP (1)

63-ball plastic FBGA

(FPT-48P-M19)

(FPT-48P-M20)

(BGA-63P-M01)

Marking Side

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MBM29LV320TE80PBT Datasheet(PDF) 4 Page - SPANSION

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