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FPD03784 Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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FPD03784 Datasheet(HTML) 2 Page - National Semiconductor (TI) |
2 / 12 page Absolute Maximum Ratings (Note 1) Analog Supply, (V DD2) (Note 2) −0.3V to +10.5V Logic Supply, (V DD1) (Note 2) −0.3V to +5.0V High Bias Supply, (V HBIAS) (Note 2) −0.3V to +12.0V Low-Polarity RDAC Reference Voltages, (V GMA7 to VGMA12) (Note 2) −0.3V to 0.5V DD2 High-Polarity RDAC Reference Voltages, (V GMA1 to VGMA6) (Note 2) 0.5V DD2 − 1.0V to V DD2 + 0.3V RDAC Current (All Gamma Voltage Taps), (I GMA to IGMA12) −2.5mA to 2.5mA Input Voltage (Digital Logic), (V IN) (Note 2) −0.3V to V DD1 + 0.3V Output Voltage, (V OUT) (Note 2) −0.3V to V DD2 + 0.3V Output Current (Analog), (I OUT) −7mA to +7mA Input Current Source, (I SIN) −200µA to +200µA Output Current Source, (I SOUT) −200µA to +200µA IREF Current, (I REF) −1mA to +0.2mA Storage Temperature Range, (T S) −55˚C to +125˚C Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation. Note 2: Absolute voltages referenced to VSS1 =VSS2 = 0.0V. Recommended Operating Conditions Min Typ Max Units Logic Supply Voltage 3.0 3.3 3.6 V (V DD1) (3.3V OR 2.5V) 2.25 2.5 2.75 V Supply Voltage (V DD2) 7.5 9.5 V Operating Temperature (T A) −10 +25 +70 ˚C DC Electrical Characteristics Digital Electrical Characteristics Symbol Parameter Conditions Min Typ Max Units V IH Input High Voltage 0.7 V DD1 V V IL Input Low Voltage 0.3 V DD1 V V OH Output High Voltage I OH = −0.5mA V DD1 − 0.5 V V OL Output Low Voltage I OL = 0.5mA 0.5 V I DD1 Logic Current (Note 3) 0.6 mA I DD1 Logic Current (Note 4) 0.36 mA I IH Input Leakage V DD1 = 3.6V, VIN = 3.6V 1 µA I IL Input Leakage V DD1 = 3.6V, VIN =0V 1 µA C IN Input Capacitance 2 pF Note 3: CLK frequency = 32.5 MHz, VDD1 = 3.3V, VSS1 =VSS2 = 0.0V, RIREF = 220 kΩ, charge share time = 1.5µs, line time = 22µs. Note 4: CLK frequency = 32.5 MHz, VDD1 = 2.5V, VSS1 =VSS2 = 0.0V, RIREF = 220 kΩ, charge share time = 1.5µs, line time = 22µs. Analog Electrical Characteristics Symbol Parameter Conditions Min Typ Max Units I DD2 Supply Current Consumption (Note 5) 4.0 mA PD Power Dissipation (Note 5) 40 mW V GMA1 Upper RDAC High Side Input (Note 6) V DD2/2 + 0.2 V DD2 − 0.2 V V GMA6 Upper RDAC Low Side Input (Note 6) V DD2/2 + 0.2 V DD2 − 0.2 V V GMA7 Lower RDAC High Side Input VDD2 ≥ 8.5V(Note 6) 0.2 V DD2/2 − 0.2 V VDD2 < 8.5V 0.2 V DD2/2 − 0.4 V V GMA12 Lower RDAC Low Side Input (Note 6) 0.2 V DD2/2 − 0.2 V V HBIAS Voltage of High Bias Current Supply: V HBIAS =VDD2 V DD2 V DD2 Separate V HBIAS Supply ≥ V GMA1 + 1.5V and ≥ 8.5V V DD2 + 2.0 V V CS Charge Share Voltage The Greater of V DD1 or V GMA7 V GMA6 V C LOAD Output Capacitive Load 30 80 pF V OUT Output Voltage Range V SS2 + 0.2 V DD2 − 0.2 V A IREF I REF to IMAX Gain Factor (Note 7) 8 10 12 www.national.com 2 |
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