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B1S Datasheet(PDF) 1 Page - DAESAN ELECTRONIC CORP. |
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B1S Datasheet(HTML) 1 Page - DAESAN ELECTRONIC CORP. |
1 / 2 page B1S THRU B10S Features Mechanical Data · Glass Passivated Die Construction · Diffused Junction · Low Forward Voltage Drop, High Current Capability · Surge Overload Rating to 30A Peak · Designed for Printed Circuit Board Applications · Plastic Material - UL Flammability Classification 94V-0 Maximum Ratings And Electrical Characteristics · Case : Molded Plastic · Terminals : Solder Plated Leads, Solderable per MIL-STD-202, Method 2026 · Polarity : As Marked on Case · Approx. Weight : 0.125 grams · Mounting Position : Any · Marking : Type Number (Ratings at 25 ℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive load. For capacitive load, derate by 20%) CURRENT 0.8 Amperes VOLTAGE 100 to 1000 Volts Notes: (1) Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC. (2) Thermal Resistance, junction to ambient, measured on PC board with 5.02mm (0.03mm thick) land areas. Peak Repetitive Reverse voltage Working Peak Reverse voltage DC Blocking voltage RMS Reverse voltage Average Rectified Output Current @ TA=40 Non-Repetitive Peak Forward Surge Current, 8.3ms single half-sine-wave superimposed on rated load (JEDEC method) Volts Forward voltage (per element) @ IF=0.4 A VRMM VRWM VR 100 Volts Symbols Units 1.0 VFM VRMS 0.8 Amp 30 IFSM Tj TSTG 500 -55 to +150 ℃ Amp Peak Reverse Current at Rated DC Blocking voltage (per element) Typical Junction Capacitance per element (Note 1) Operating and Storage Temperature Range B1S B2S B4S B6S B8S B10S 70 10 10 200 400 140 280 600 420 800 560 1000 700 Volts μA ℃/W pF Io IRM Cj R θJA @ TA=25 ℃ @ TA=125 ℃ Typical Thermal Resistance, Junction to Ambient (Note 2) 75 ℃ A B C D E G H J L K MiniDIP Dim Min Max A 5.43 5.75 B 3.60 4.00 C 0.15 0.05 0.35 D 0.20 7.00 E G 0.70 1.10 H 4.50 4.90 J 2.80 2.90 K 2.50 2.70 L 0.50 0.80 A ll Dimens ions in mm |
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